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Silicided poly...silicon targe poly
, V# }' {( T. Eunsilicided poly...unsilicon targe Poly) m- D& O/ C; P6 w# [# ~
. v* `; G+ R2 @9 A& @" {tc1 First-order temperature coefficient. (Default: resistor model parameter tc1r; 0 if no model is specified.)* o1 _% Q: x+ b5 V% g# j2 D
tc2 Second-order temperature coefficient. (Default: resistor model parameter tc2r; 0 if no model is specified.)
* _$ U, S# Y! X2 x# gvc1 voltage across the first capacitor8 X/ N: A% z" T1 L
vc2 voltage across the second capacitor, q) f5 N5 b* e- C& o X. m
8 Z2 z" }2 J5 l' s& j: y6 iA two-terminal resistor.
! s$ o* |4 ^3 {- z# F$ @$ ZThe resistance R is influenced by the temperature as follows:* F5 \" l( }- j2 f ?
R = N (1 + AT + BT2)) [ t$ k8 O# Y" D- x( `) V% T
T = Ta – Tn
! B$ c q0 d* Fwhere N, A, B are device parameters described below; Ta (the “ambient” temperature) is set by the
7 e+ c) L( d$ K! _2 m% q.temp command; and Tn (the “nominal” temperature)
8 ^5 b( \1 P, ~$ x- M+ i* _; M& G' S: w, u! r* U1 H# x' m
6 |# B: a& |, S' ^3 ~3 _
This produces a resistor of resistance 30 kilohms at the nominal temperature tnom. If the temperature T# a" z. Y3 V* C9 k. ]
is different from tnom, the resistance is 30,000*(1+0.01*(T-tnom)+0.0001*(T-tnom)*(T-tnom)). For" D& n1 V8 P4 H
example, if the circuit temperature is 127 degrees and tnom is 27 degrees, the resistance is3 q/ K. z( p G$ g* w4 `
30,000*(1+0.01*100+0.0001*100*100) = 90,000 Ohms.
# T) d+ U1 u0 C& v6 V3 o, f. e4 c2 o" |* W2 k' X
[ 本帖最後由 m851055 於 2007-7-30 08:50 PM 編輯 ] |
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