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Silicided poly...silicon targe poly7 T) {1 M8 E/ u/ ~- }6 }0 S
unsilicided poly...unsilicon targe Poly
6 E" _* S; d/ f: q# _
! e5 l) \0 Q; utc1 First-order temperature coefficient. (Default: resistor model parameter tc1r; 0 if no model is specified.)
$ n5 i8 u K2 \5 p: S6 e5 e2 s' H8 wtc2 Second-order temperature coefficient. (Default: resistor model parameter tc2r; 0 if no model is specified.); {& [% d0 [4 a1 R
vc1 voltage across the first capacitor
1 _* H8 r- C% B0 w& wvc2 voltage across the second capacitor2 ~# B8 U2 Y3 N7 L$ @% U Y
5 ?# k2 R, ]% s L8 N& R5 `
A two-terminal resistor.: R) m6 u' L" h/ m+ G
The resistance R is influenced by the temperature as follows:
/ |- v% d1 W1 F; {; L: }R = N (1 + AT + BT2)" D8 T1 A# F% f# F, G ]
T = Ta – Tn% k! _8 ?- `; }
where N, A, B are device parameters described below; Ta (the “ambient” temperature) is set by the/ Q5 W4 Z- c) M# t5 ^1 \: o* X
.temp command; and Tn (the “nominal” temperature)* ]7 }% |, u# V. i2 _: Y) q6 @
* B' w F4 n, K8 B& ]# g7 t% h! h
# j6 i7 [7 f3 e7 K: p0 x* E8 s
This produces a resistor of resistance 30 kilohms at the nominal temperature tnom. If the temperature T
0 R% H) R5 E; x) {' X* s! nis different from tnom, the resistance is 30,000*(1+0.01*(T-tnom)+0.0001*(T-tnom)*(T-tnom)). For
& |1 b) s6 S" o- h6 m3 O& W7 ]/ cexample, if the circuit temperature is 127 degrees and tnom is 27 degrees, the resistance is( B# M2 t; N4 j. C' D, s
30,000*(1+0.01*100+0.0001*100*100) = 90,000 Ohms.8 k P: C9 ]3 w8 Y! E' m: F
2 X- J9 w! Q4 O& }0 C* w- p3 Q/ n[ 本帖最後由 m851055 於 2007-7-30 08:50 PM 編輯 ] |
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