HF-vapor release process for ultrathin single crystal silicon cantilevers[EPFL]

mt7344

Combined Al-protection and HF-vapor release process for ultrathin single crystal silicon cantilevers
8 w8 \/ g) H3 J  DAbstract
A new technology based on a combination of Al-protection layers and HF-vapor etching to produce ultrathin single crystal silicon
: B8 M3 e8 B, Pcantilevers is presented. 500 lm long, 10 lm wide and 0.5 lm thick cantilevers have been fabricated with a high yield. A resonance frequency
4 N4 C4 \" I9 R7 _- Qof 2 kHz, Q factor >100,000 and a force sensitivity of 6.0 · 1017 N/Hz1/2 have been obtained in vacuum at room temperature for
5 W9 H( \: Q* D: ]( M( w. P0 Pcantilevers annealed at 800 C.


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[ 本帖最後由 mt7344 於 2007-6-7 09:57 PM 編輯 ]