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Design and Analysis of Technology Errors( [7 w( l2 W; W
for CMOS Poly-silicon Capacitor
& k1 X, g- E6 eZHUZhang-ming ,YANGYin-tang , ZHANGChun-peng , FUXiao-dong
9 s' [5 t6 I0 y(Microelectronics Institute ,XidianUniversity,Xi’an 710071 , China)
: G' z% a) t+ x: Z, a! N; b$ x$ n7 BAbstract : The technology errors of CMOS poly-silicon capacitor are analyzed .The effect of various errors introduced8 V7 x( x9 }3 O
during fabrication on CMOS poly-silicon capacitor is discussed .Based on the improved design of unit-capacitors , the
: S/ W8 j r4 Z7 E' i- Z5 M8 `+ qcommon-centroid floorplan of poly-silicon capacitor is presented . On the proposed capacitor design way , the CMOS
% n" i" p/ L4 z" u* x8 gswitch-capacitor bandpass filters is implemented using 0.6μmCMOSDPDMprocess .Themeasured results of filters show
, u- l0 S* y5 q% vthat the proposed capacitor designway can be used to design high accuracy capacitors ,and applied to the design of submicro( M+ D7 V* J) U2 F
and deep sub-micro analog integrated circuit .
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8 A# n. { j0 ]) m V回覆後 可以下載PDF附件 權限10 & 3RDB d& l+ h% j% h0 L( m1 V8 d( x
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, c" V9 t& L6 W5 r[ 本帖最後由 sjhor 於 2007-5-17 10:37 PM 編輯 ] |
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