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ACMOSLowNoise Amplifier at 1.8GHzwith Active Inductor Load, @+ \* D! ] N
WANGLiang-jiang,FENGQuan-yuan
- ]- r5 r" L% l: V6 c(I nstitute of Micro-electronics, Southwest J iaotong University, Chendu 6 1 00 3 1 , China )
# X; X2 H5 P3 E5 e q* s+ eAbstract:A 1.8G H z C M O S low noise am plifier (L N A ) w ith transform er-type active inductor load is presented.
8 l+ D, g$ n- m& v; }F or large inductance value, the quality-factor (Q) of an on-chip passive inductor is com m on ly low .0 ~# ^9 H7 M# l
H ence, the purpose of this w ork is to verify th e validity of using transform er-type active inductor load as" Y9 K: S( N5 S- \- K/ K2 o
substitutes for passive one. T he perform ance of the L N A is sim ulated and com pared w ith certain existing
4 X* K K7 k" p7 w3 h2 AL N A w ith passive on -chip inductor load w hich show s the L N A w ith transform er-type active inductor load
* l; u% ^5 M5 s. Bcan achieve low er noise figure.$ m: z; ~9 x I; W
$ S# }% ?: y- S1 U
; [7 u. H" n+ ~) m$ g. _! ~回覆後 可以下載PDF附件 權限10 & 3RDB
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/ g8 B) q! g6 [& }6 E: D1 Q/ R( u2 _3 q6 |# T
[ 本帖最後由 sjhor 於 2007-5-17 10:33 PM 編輯 ] |
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