借鉴一下RF ESD Design in 130nm CMOS

semico_ljj

An ESD-Protected 5-GHz Differential Low-Noise Amplifier in a 130-nm CMOS Process
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Abstract- A novel ESD protection design for radio-frequency (RF) differential input/output (I/O) pads is proposed and successfully
& @/ u) [" u8 S- ^+ F- q9 ~applied to a 5-GHz differential low-noise amplifier (LNA) in a 130-nm CMOS process. In the proposed ESD protection design,
an ESD bus and a local ESD clamp device are added between the differential input pads to quickly bypass ESD current, especially
under the pin-to-pin ESD-stress condition. With 10.3-mW power consumption under 1.2-V power supply, the differential LNA
% F* M' x, J* L+ e5 j7 Y# L' Wwith the proposed ESD protection design has the human-bodymodel (HBM) ESD robustness of 3 kV, and exhibits 18-dB power gain and 2.62-dB noise figure at 5 GHz. Experimental results have demonstrated that the proposed ESD protection circuit can be co-designed with the input matching network of LNA to simultaneously achieve excellent RF performance and high ESD robustness.
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