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An ESD-Protected 5-GHz Differential Low-Noise Amplifier in a 130-nm CMOS Process
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7 I6 t- z& a* J% t0 DAbstract- A novel ESD protection design for radio-frequency (RF) differential input/output (I/O) pads is proposed and successfully
& a! @* B' H- _1 a8 Vapplied to a 5-GHz differential low-noise amplifier (LNA) in a 130-nm CMOS process. In the proposed ESD protection design,$ a: d8 `% y9 G( n/ D3 r: I. _7 l" ?
an ESD bus and a local ESD clamp device are added between the differential input pads to quickly bypass ESD current, especially2 \- |, x3 `* K& A' @
under the pin-to-pin ESD-stress condition. With 10.3-mW power consumption under 1.2-V power supply, the differential LNA
5 z* v: y. e" k" wwith the proposed ESD protection design has the human-bodymodel (HBM) ESD robustness of 3 kV, and exhibits 18-dB power gain and 2.62-dB noise figure at 5 GHz. Experimental results have demonstrated that the proposed ESD protection circuit can be co-designed with the input matching network of LNA to simultaneously achieve excellent RF performance and high ESD robustness.- `5 ~( i8 C& Z# c' z/ m* f1 O; u
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