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For ESD test (HBM)$ X5 t b. H" p) k+ V; A
The following are the test combination:$ r/ l4 e* m/ u7 `" S; c
1. Power to Power# ~4 W: ] d$ g2 I" {5 O
2. Power to Ground. X# Y# L( H/ b B# Z
3. IO to Power
/ S3 G% a& r& \# I# h& ]/ ?6 Q4. Io to Ground) ?1 X4 L! W( R3 ?; ^# M9 q" w
5. IO to IO
5 o- K. `0 V- K# @7 J, k(different power domain need to be treated as different power. For ground usually you can treat as one group_silicon use substrate as common ground. But if you measure two different ground pin/ball > 2ohms. It should be seperated as 2 grond.)9 p0 ?9 O, d, M! K5 p. x' |* e0 O
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the total zap time fomula will be~ 2(+/- polarity) X (IO#X(P#+G#)+IO#+P#X(P#-1)X(P#-2)X...X1+P#XG)
1 r9 N7 |" V' @" HFor example: You have IO1/IO2/IO3/P1/P2/G1( V7 a- J9 d& v F" [
2x((3X(2+1)+3+2X1+2X1)=25(multiple the zap interval)
0 b* a- W0 e* h! TSo for high pin count it will take a lot of time. But it won't take more than a week(for one chip).
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For your reference. |
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