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Refer to "HSPICE User's Manual: Elements and Device Models Vol.II"/ p6 B! h1 ^; S3 K& X
An example for your reference...
+ k( a+ ^4 S4 n
5 v# H1 h" b6 G$ Y z----------------------------------------------------------------% ` {, c' X) r
***** Gate Capacitance Plots *****: b6 N2 ^. R8 x/ B* n6 Z. d7 Z
.lib 'your_component_model' lib_corner8 s/ F1 F1 u$ d' S3 ?# v9 }
.temp operational_temp
' W5 ?+ L" ]. `# A.option dccap=1 post
0 {5 n7 d" I. H4 J( t0 Em1 n_drain n_gate gnd n_bulk l=0.8u w=100u ad=200e-12 as=200e-127 l' j7 d7 w1 N) U2 T2 G, u; {! p
vd n_drain gnd 05 s8 K1 W$ t* E. W
vg n_gate gnd 5% m: s$ [2 U( @. J
vb n_bulk gnd 0
* l2 |1 S9 J" Q1 j- `- [* D9 ~.dc vd 0 5.0 0.1: T0 C+ ^% ]# X
.print CGG=lx18(m1)
+ g- Q/ F9 q; k* N+ CGD=par('-lx19(m1)')" {# y# N1 }, U. {8 O4 v
+ CGS=par('-lx20(m1)')/ N5 p! G% l3 d3 s1 N/ P
+ CDG=par('-lx32(m1)')/ a% d& V4 I% d+ _+ o1 }5 x. h2 u6 n
+ CSG=par('lx18(m1) + lx21(m1) + lx32(m1)')
' a1 U9 a. l. D: s& D. R+ |/ S+ CGB=par('lx18(m1) + lx19(m1) + lx20(m1)')
# K. W( }; W! X1 f.ends2 t4 x( A, w% [7 g1 \. t1 N
0 N3 a1 m' Y' ?# }8 I----------------------------------------------------------------
3 t# `5 P- L9 H0 G: m% ?Six capacitance are reported in the operating point printout5 l e; T- }7 p2 p5 d
cd_total = dQD/dVD7 @0 s4 D9 `# ]; q8 ]0 c3 H
cg_total = dQG/dVG. b+ N/ t2 Y& g
cs_total = dQS/dVS: y. B' V* M% Q5 t/ e) x5 m
cb_total = dQB/dVB
; w2 T: b( N4 r. J& C6 c- i cgs = -dQG/dVS* Q8 d' j+ e u" E0 x
cgd = -dQG/dVD% f# R- g/ }1 ?& o
There capcitances include gate-drain, gate-source, and gate-bulk
9 k! f0 }" {; s" c$ _3 ~7 C6 Roverlap capacitance, and drain-bulk and source-bulk diode capacitance.2 J, O( C0 ?" a# S1 h$ C5 T0 _
, [2 z9 P5 r, W. g, P
CGG = dQg/dVG
( ]" [+ L+ ^. v! z0 I* l# h8 D( XCGD = -dQg/dVD; O6 o3 r! y3 M7 ~
CDG = -dQD/dVG
: [; u I0 p; M6 c; D; f- q' D" [ K7 N6 z9 y: s
The MOS element template printouts for gate capacitance are LX18~LX23- G$ P: X' d { s6 i4 \* H. I
and LX32~LX34.
4 \ t$ e" o+ k+ h6 n
% a5 I, x8 Q5 }- n; ?7 h+ v/ M" i4 hLX18(m) = dQG/dVGB = CGGBO
+ a' T2 p. R7 E0 h. N5 CLX19(m) = dQG/dVDB = CGDBO
|+ ?1 [* h1 `- Y: |8 LLX20(m) = dQG/dVSB = CGSBO7 H* s0 ~, a5 q: |6 t7 I
9 g4 M# @. S5 k# \( R
LX21(m) = dQB/dVGB = CGGBO4 M1 T/ Z" y: u4 x1 b" G& b
LX22(m) = dQB/dVDB = CGGBO
$ E1 v# f# M- t$ K1 A0 ~LX23(m) = dQB/dVSB = CGGBO
* C9 v& y- {8 x7 W, @6 @- y( F5 V! a5 _& x
LX32(m) = dQD/dVG = CDGBO. v$ x0 s* h; N& `: N* y% ~
LX33(m) = dQD/dVD = CDDBO
, ~* u8 O. t: {$ {LX34(m) = dQD/dVS = CDSBO
+ A$ v0 U) b' {! B1 p9 [& M! H) a
8 y( Y, Y0 t8 B+ I% k7 R, ^! c* `# J3 xThe equation shown above is for an NMOS with source-bulk grounded
_) x- P1 l. X) Zconfiguration. Refer to the user's manual for more detail ^^ |
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