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2#
樓主 |
發表於 2021-9-26 20:14:03
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RC ckt
# G* k+ ]7 ^8 F6 {/ K% ER=60k ohm & C=1p F, X9 z, a, d1 c9 N" z6 g
BW=2.65M+ Z/ v s1 O, O3 }$ f
----; E( b, p- g3 K
NMOS common source
* z2 T7 f7 g8 b6 gMn1 vout vin vss vss w=1u l=0.18u m=1
2 v# |' z s- Q0 VMp1 vout vbias vdd vdd w=3.34u l=0.18u m=1 8 |- I, y! |6 X9 j3 W
Cout vout vss 400f
" Z. z; t, c1 r% I% |! {0 `BW=17M Hz @Vout=0.9+ @5 ^% d4 g: `6 d$ Q% O( S
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7 E1 c' h% q6 [* \. I3 Eac noise的模擬條件9 |7 f2 |) P! v
.ac dec 10 1 1g3 c G8 s8 r6 s, _% C: n
.noise v(vout) vin 1
* q7 z' n! Y8 I+ R: x9 M: r# K3 {------
( s$ ^7 x ]% v3 R7 _! Q.trannoise的模擬條件0 a& q/ `8 X3 D! w% u" ~1 z
.tran 1n 3u9 v+ [. W% p6 l
.trannoise V(vout) SEED=2 SAMPLES=512 FMIN=1 FMAX=1g |
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