Layout Optimization on ESD Diodes for Giga-Hz RF and High-Speed I/O Circuits

semico_ljj

Layout Optimization on ESD Diodes for Giga-Hz RF and High-Speed I/O Circuits

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semico_ljj

Abstract -- The diode operated in forward-biased condition has
2 ^+ N3 ?: J2 W! }% a) Y0 wbeen widely used as an effective on-chip ESD protection device at
GHz RF and high-speed I/O pads due to the small parasitic
: r1 C8 x& t8 M; Yloading effect and high ESD robustness in CMOS integrated
circuits (ICs). This work presents new ESD protection diodes
4 ~8 @  b" O2 zrealized in the octagon, waffle-hollow, and octagon-hollow layout
2 c3 [1 q% z1 x. P3 c* Istyles to improve the efficiency of ESD current distribution and
to reduce the parasitic capacitance. The new ESD protection
" y7 b+ T2 V5 b% K. T( Xdiodes can achieve smaller parasitic capacitance under the same
& x& N" l8 S) Q# C: N" q& nESD robustness level as compared to the waffle diode. Therefore,
' h- A7 W8 A& `) g9 v# m' V8 Athe signal degradation of GHz RF and high-speed transmission
can be reduced due to smaller parasitic capacitance from the new
proposed diodes.

xp212125o

看起來有幫助
( g  r  P- ^0 ~3 U3 Z% {2 g感謝分享
先下載來看看
2 J; O" ]+ Y" N5 Q( D; B  \% qthank you ~

linyuejing

下載來看看
下載來看看
5 O5 G' \( g; i/ M5 k; |下載來看看
下載來看看
6 q/ \% F  J) I3 n3 x應該有幫助
# y! A* P1 V5 H. C8 f. ~; ]9 _謝謝囉

caesarxl

谢谢楼主分享，非常感谢

oika_51

看起來有幫助
) o# J# i- c2 u; f  E感謝分享

linger809

Abstract -- The diode operated in forward-biased condition has
been widely used as an effective on-c ...
5 L) W1 S  ]* M* Q# ]* f: Tsemico_ljj 發表於 2010-6-25 08:50 AM

1 j$ o3 g3 O3 L. c& H( n
7 ]- p$ a, S% M) y  l) y3 K0 }
不知道这种形式的ＩＯ有没有经过测试，实际的效果和预想的有多少的差别，thanks!

oscargo

正為ESD耐受度傷腦筋----

zhifj86

thank you very much for your sharing

sslin

謝謝大大的分享~~知識因分享而壯大！
: n6 r5 P$ g3 [3 ~% h% P( f! l
~只有站在巨人的肩膀上才不會被食人族吃了!