|
樓主 |
發表於 2010-6-25 08:50:33
|
顯示全部樓層
Abstract -- The diode operated in forward-biased condition has
8 c" I( B4 }4 D7 e( pbeen widely used as an effective on-chip ESD protection device at
: k7 S `4 H* D! Y* wGHz RF and high-speed I/O pads due to the small parasitic
7 S9 N: F4 R0 z$ ?loading effect and high ESD robustness in CMOS integrated
2 _) X% l: ^. q# Z! @( Y- L$ fcircuits (ICs). This work presents new ESD protection diodes
6 d. `6 N, L8 d, f6 }0 M2 brealized in the octagon, waffle-hollow, and octagon-hollow layout
8 D4 G4 H8 @! Q1 Rstyles to improve the efficiency of ESD current distribution and& B+ e) A( A. C" D* N
to reduce the parasitic capacitance. The new ESD protection
# f8 o- _2 v' c& H9 wdiodes can achieve smaller parasitic capacitance under the same
; E5 m8 `2 H' O/ r6 aESD robustness level as compared to the waffle diode. Therefore,9 I, Y. |, T: T- S- X& {
the signal degradation of GHz RF and high-speed transmission) F: t, j: K4 u) E, o/ ]
can be reduced due to smaller parasitic capacitance from the new7 ^- W- P% m* o
proposed diodes. |
|