Layout Optimization on ESD Diodes for Giga-Hz RF and High-Speed I/O Circuits

semico_ljj

Layout Optimization on ESD Diodes for Giga-Hz RF and High-Speed I/O Circuits
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semico_ljj

Abstract -- The diode operated in forward-biased condition has
been widely used as an effective on-chip ESD protection device at
GHz RF and high-speed I/O pads due to the small parasitic
; L3 S: |2 N1 z/ e+ C9 p! dloading effect and high ESD robustness in CMOS integrated
circuits (ICs). This work presents new ESD protection diodes
realized in the octagon, waffle-hollow, and octagon-hollow layout
% p& T, p+ j5 L$ s$ ~$ F- Nstyles to improve the efficiency of ESD current distribution and
- q3 g8 m  ]* Q4 J/ `to reduce the parasitic capacitance. The new ESD protection
5 s4 \* h. D" S! p2 @- Cdiodes can achieve smaller parasitic capacitance under the same
: ]4 m/ R3 r' i5 ~* g5 oESD robustness level as compared to the waffle diode. Therefore,
; A) t% o; }/ ~: x* ithe signal degradation of GHz RF and high-speed transmission
; X2 c0 o& {  \+ _0 u* P7 U7 Kcan be reduced due to smaller parasitic capacitance from the new
, }4 o: W, @- ?* l% D8 hproposed diodes.

xp212125o

看起來有幫助
& n7 x4 O$ m5 ]; J) c感謝分享
* F# z4 n7 J. y  @先下載來看看
thank you ~

linyuejing

下載來看看
下載來看看
) Z6 u+ F" G* R" \下載來看看
2 [  a6 x! K! H+ Z9 N下載來看看
# p# `+ k, o! @7 N7 L) j應該有幫助
謝謝囉

caesarxl

谢谢楼主分享，非常感谢

oika_51

看起來有幫助
2 }+ a, b7 \% @1 U: J9 w感謝分享

linger809

Abstract -- The diode operated in forward-biased condition has
% y% P1 [% i$ R* D4 K2 wbeen widely used as an effective on-c ...
0 x: i0 e8 Z! a9 W/ p- K2 msemico_ljj 發表於 2010-6-25 08:50 AM

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不知道这种形式的ＩＯ有没有经过测试，实际的效果和预想的有多少的差别，thanks!

oscargo

正為ESD耐受度傷腦筋----

zhifj86

thank you very much for your sharing

sslin

謝謝大大的分享~~知識因分享而壯大！

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