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A novel ESD protection design for radio-frequency (RF)
2 W: n. p5 e R8 i+ \! e) ?% Vdifferential input/output (I/O) pads is proposed and successfully* N- N) [: B' |& i& ]& q- A
applied to a 5-GHz differential low-noise amplifier (LNA) in a! J m- P; { B) Z6 L* y: r( G
130-nm CMOS process. In the proposed ESD protection design,9 X* v3 A W) _5 f, }+ H# P8 C
an ESD bus and a local ESD clamp device are added between the n! Y# [7 n& T% \1 m& Q
differential input pads to quickly bypass ESD current, especially
) Z" c/ N9 Q0 n& K, }) I- I: k# Zunder the pin-to-pin ESD-stress condition. With 10.3-mW power- m j' s% ]+ c/ v" P1 p
consumption under 1.2-V power supply, the differential LNA
9 u# b8 B2 A* U% Pwith the proposed ESD protection design has the human-bodymodel* ]4 e6 ?7 Y5 k4 w
(HBM) ESD robustness of 3 kV, and exhibits 18-dB power
. g2 O. F% m W6 o* M$ d0 kgain and 2.62-dB noise figure at 5 GHz. Experimental results
" G' q0 |/ I/ z* E: i5 L" g- ahave demonstrated that the proposed ESD protection circuit can
) P) ^/ m; r* [' `- {be co-designed with the input matching network of LNA to1 x9 D7 g2 T# s6 f
simultaneously achieve excellent RF performance and high ESD robustness.
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