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A novel ESD protection design for radio-frequency (RF)% q; z% h# _) {6 d! V
differential input/output (I/O) pads is proposed and successfully9 W, @! n- C) U9 C4 @7 q: {0 u
applied to a 5-GHz differential low-noise amplifier (LNA) in a
8 }- [! k+ @9 s0 i* H( e; q+ g130-nm CMOS process. In the proposed ESD protection design,
' S1 o8 |% m Q8 |/ `% W' P3 Ean ESD bus and a local ESD clamp device are added between the5 _' U$ G5 c: @
differential input pads to quickly bypass ESD current, especially
) s9 q( T3 V' m1 D+ b/ U$ Uunder the pin-to-pin ESD-stress condition. With 10.3-mW power% p) x& m3 t6 a
consumption under 1.2-V power supply, the differential LNA3 q! ?: w, r, \/ c6 [% N3 c' Q( u
with the proposed ESD protection design has the human-bodymodel- d$ U3 B8 w( q) h0 t
(HBM) ESD robustness of 3 kV, and exhibits 18-dB power
1 j# I8 s- M) b, J1 y- [gain and 2.62-dB noise figure at 5 GHz. Experimental results' w8 J* m, g8 d* _" Z8 I
have demonstrated that the proposed ESD protection circuit can# |2 d( m3 {. L5 t' z
be co-designed with the input matching network of LNA to9 O" @+ o' |# f3 L- f
simultaneously achieve excellent RF performance and high ESD robustness.8 L# D( h& g7 h |. j+ Q3 v8 M
0 l1 r, r2 v3 z A8 N6 J% N H; s
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