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A novel ESD protection design for radio-frequency (RF)+ D4 e' |. |/ o+ C$ k6 G; c) f
differential input/output (I/O) pads is proposed and successfully- w, Q2 w9 n) E$ {4 T
applied to a 5-GHz differential low-noise amplifier (LNA) in a
/ S J' I' b% Z: R/ K130-nm CMOS process. In the proposed ESD protection design,
1 S5 i0 w1 V: m2 C& @$ |an ESD bus and a local ESD clamp device are added between the5 [( L# S5 k; C& {0 _
differential input pads to quickly bypass ESD current, especially
9 p# G$ E; W$ `- _) ?, Wunder the pin-to-pin ESD-stress condition. With 10.3-mW power
0 D- O% |5 l, econsumption under 1.2-V power supply, the differential LNA
: [& v3 V1 C8 ]+ E% m+ P4 Y% xwith the proposed ESD protection design has the human-bodymodel, r9 V- c& |5 ?; H- V! D
(HBM) ESD robustness of 3 kV, and exhibits 18-dB power/ M3 i& t$ B" U6 @6 l. L' G
gain and 2.62-dB noise figure at 5 GHz. Experimental results
& h" ^0 A5 j: c' `$ X3 I! j; }have demonstrated that the proposed ESD protection circuit can
% R y/ v; P/ q9 lbe co-designed with the input matching network of LNA to
% K' w' K. R8 @0 z, G, ?1 `simultaneously achieve excellent RF performance and high ESD robustness.- s6 D5 K; U$ q d
m9 N) y m# v9 K" G* F
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