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A novel ESD protection design for radio-frequency (RF)& u/ O4 H* z% U7 l. m, G8 ^0 |4 t
differential input/output (I/O) pads is proposed and successfully
) U7 u0 h2 p3 v% ]! oapplied to a 5-GHz differential low-noise amplifier (LNA) in a
% |! W" r5 \, N0 P130-nm CMOS process. In the proposed ESD protection design,1 x+ l1 _, q) ^7 g
an ESD bus and a local ESD clamp device are added between the- Z `! H$ ?5 E0 T7 N
differential input pads to quickly bypass ESD current, especially- Y1 K: M( l' }. r
under the pin-to-pin ESD-stress condition. With 10.3-mW power: `% y9 R2 E0 h. D! R
consumption under 1.2-V power supply, the differential LNA
" ]+ `2 V6 d- P5 i7 R; |) pwith the proposed ESD protection design has the human-bodymodel
8 U8 E8 E; g6 P(HBM) ESD robustness of 3 kV, and exhibits 18-dB power
5 c' m5 I" [5 R' U! l' q$ ~gain and 2.62-dB noise figure at 5 GHz. Experimental results
4 l2 l3 z, E( q. @+ E4 C% Lhave demonstrated that the proposed ESD protection circuit can
. n# C$ q& \7 a( g# rbe co-designed with the input matching network of LNA to
# G7 X" r" d1 @* V; `simultaneously achieve excellent RF performance and high ESD robustness.
" t7 ?2 J2 _1 u6 R* S* l8 ^2 s7 L( x: J# ?7 L
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