First Fully CMOS-Integrated 3D Hall Probe[EPFL/2005]

mt7344

網路上抓的 paper, 希望對大家有幫助!!
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ABSTRACT
1 D% g. \+ D' O9 lIn this paper, we present a new planar fluxgate
5 ]5 c) K, N  l3 Imagnetometer structure. The sensor has the
orthogonal fluxgate configuration which makes the
detection part independent of the excitation
mechanism. The sensor consists of a ferromagnetic
cylindrical core covering an excitation rod, and
$ P: \9 D. }- F3 [8 Wplanar coils for signal detection. The fabricated
+ C9 I7 c0 V+ N' }4 f% ?9 ksensor has a linear range of ±250 μT, a sensitivity
2 `0 |3 h2 H$ N$ |4 B: U' vof 4.3 mV/mT, and a perming below 400 nT for
) V4 D. M* s' \- Y: t200 mA peak sinusoidal excitation current at
100 kHz. The effect of demagnetization on the
sensitivity, linear range, and perming for this
# S0 O2 I! B$ o0 S  r  Gstructure is demonstrated by varying the length of
" q7 e5 S6 B. f7 K' Cthe ferromagnetic core.

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9 r9 n9 [1 t, d4 PABSTRACT
/ B: y4 p) f9 M& oIn this paper we report on a 32x32 optical imager
3 Y5 ^8 L" ]* r3 Q/ E. |* W4 v$ bbased on single photon avalanche diodes integrated in
2 r8 Q9 E+ F; }" ?/ c4 A7 \CMOS technology. The maximum measured dynamic
range is 120dB and the minimum noise equivalent
4 M- |7 B+ m0 X5 z; j4 ]& Jintensity is 1.3x10-3lx. The minimum integration time
per pixel is 4􀁐s. The output of each pixel is digital,
4 r0 f/ w3 n1 @2 tthereby requiring no complex read-out circuitry, no
amplification, no sample & hold, and no ADC.
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: h) ~% _( ]* c/ c+ c' |% KABSTRACT
We present the first fully CMOS-integrated 3D
Hall probe. The microsystem is developed for precise
( P, J6 |+ T) bmagnetic field measurements in the range from
' y% p+ m1 _/ ?militeslas up to tens of tesla in the frequency range
! T( [# h# Z( d" mfrom DC to 30 kHz and a spatial resolution of about
150 μm. Microsystem is realized in a conventional
CMOS process without any additional processing step
and can be manufactured at very low cost. With the
electronics circuit applying the so-called spinningcurrent
: J* x8 N. B4 J. m2 W9 ktechnique to the Hall sensor block, we obtain
, t9 R; G$ L; q7 `  mlow noise (a resolution better than 100 μT) and low
1 e: }6 e$ H3 p/ W4 l) q) Z, lcross talk between the channels (less than 0.2%
between the channels up to 2 T). The single chip
- a/ F5 F5 s$ F$ y& Y# g9 @9 D5 R: fconfiguration insures a precision of the orthogonality
  j( h& ^; Z3 `: Ybetween the measurement axes better than 0.5°. A
+ q* y2 g* _, G4 h+ Stemperature sensor based on band-gap cell is integrated
directly on the chip, which allows a good temperature
drift compensation of the system.
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4 x( k3 Q+ }/ dMagnetic sensors having submicrometer spatial resolution
are key elements in several fundamental studies as well
6 @" K3 y7 N2 E% Pas industrial applications.1–4 Hall effect devices are emerging
as one of the most suitable solutions.4–9 The ordinary Hall
effect is due to the Lorentz force acting on charge carriers in
metals, semi-metals, and semiconductors.5 Magnetic materials
4 E+ B. x& h2 r# ~" ]# h" oshow additional “Hall phenomena” which are, generally
3 F* k9 y% n: k7 fspeaking, generated by spin–orbit interactions: the so-called
8 y" g: m8 u" m" O( s( ]extraordinary10–16 and planar Hall effects.17–
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# ?" h% D+ v: v% I  \We developed a LODESR spectrometer based on a miniaturized Hall sensor and a
8 d. A( C. a8 O  f, a3 Gresonant cavity tuned at 14 GHz. We used InSb cross-shaped Hall devices (designed and
" o+ F$ `8 \5 a, Z+ j4 [3 r7 tfabricated in collaboration with Asahi Corporation) with active areas down to (7 μm)2. The
Hall sensor is inserted in the cavity within a hole.
Coupling between the microwave power (guided wave) and the cavity is achieved by using
1 G6 A2 R+ C; S4 ^6 l$ H. ]8 pan iris.We adjusted the iris diameter and the cavity dimension such that the resonant
6 r- O" y! `# nfrequency is about 14 GHz. Our final design has a 4.36 mm diameter aperture. The Hall
device does not significantly change the Q-factor and the resonance frequency of the cavity.
The quality factor Q of the cavity is about 104.
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4 Z6 m9 V" A- iAbstract—In this paper, we present a low-power, two-axis fluxgate
  k8 Z5 V1 ^$ }8 [1 I" }: x, kmagnetometer. The planar sensor is integrated in a standard
9 }3 ^+ ^/ L- K% \0 |' w8 ~: q0 UCMOS process, which provides metal layers for the coils and
) d; f/ I. {) ]1 \  c$ Uelectronics for the signal extraction and processing. The ferromagnetic
; F0 _, P3 H" P8 R* _core is placed diagonally above the four excitation coils
by a compatible photolithographic post process, performed on
a whole wafer. The sensor works using the single-core principle,
8 m5 `% X% g% x6 O& ?4 Fwith a modulation technique to lower the noise and the offset
3 B! K4 K4 n0 S3 W& M6 K/ T# Fat the output. In contrast to traditional fluxgate approaches, the
! w- a1 k" O4 N3 `sensor features a high degree of integration and minimal power
consumption at 2.5 V of supply voltage that makes it suitable
for portable applications. A novel digital feedback principle is
integrated to linearize the sensor characteristics and to extend the
linear working range.

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$ F  T8 U% i% y, ?8 n: pA microscopic four-point probe

4PP for resistivity measurements on thin films was designed and
fabricated using the negative photoresist SU-8 as base material. The device consists of four
2 ]1 c" n6 N0 p* _microscopic cantilevers, each of them supporting a probe tip at the extremity. The high flexibility of
SU-8 ensures a stable electrical point contact between samples and probe tip with all four electrodes
5 j4 q: G: N; r1 Q# H2 j: h( yeven on rough surfaces. With the presented surface micromachining process,
4PPs with a
* C% y: I- @7 D, d1 ~probe-to-probe spacing of 10–20
m were fabricated. Resistivity measurements on thin Au, Al, and
Pt films were performed successfully. The measured sheet resistances differ by less than 5% from
those obtained by a commercial macroscopic resistivity meter. Due to the low contact forces

Fcont10−4 N, the
4PP is suitable to be applied also to fragile materials such as conducting
polymers. Here the authors demonstrate the possibility of performing resistivity measurements on
100-nm-thick pentacene
C22H14 films with a sheet resistance Rs106 /
. © 2005 American
2 @+ N  n: p1 {. u% K7 O5 _Institute of Physics.
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3 k" c% A7 P. B' lWe present here a novel concept to perform NMR spectroscopy: Confining the sample within
artificial vesicles, which are structured on the surface of a microfabricated planar detection
! w2 x+ ?, e$ A) b: n' w' v, Y5 ]coil. Different vesicle patterns show the improvement of the NMR performance, when
" z% H" }6 @1 ^5 `' j* k# m* sstructuring the sample in areas of homogenous RF field.

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We developed an inductive system to measure the surface concentration of superparamagnetic
microbeads resulting from a bioassay. Our tabletop apparatus, tested with Dynal MyOne™
# v% l' [4 _9 w# a7 smicrobeads, has a detection limit of about 1000 beads/Hz1/2
i.e., about 2
1010 Bohr magnetons.
The system can measure surface concentrations from 0.01% to 100% over the 6 mm2 sensitive area
with an integration time of 1 s. © 2005 American Institute of Physics.

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. u$ E6 |* h. R  e4 k, y" P, }[ 本帖最後由 mt7344 於 2007-6-11 10:47 PM 編輯 ]

angala

推推,我想看paper^^感謝大大唷~~

engineer

探討『磁力』相關的論文嗎？值得一看，甘溫啦。