HF-vapor release process for ultrathin single crystal silicon cantilevers[EPFL]

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Combined Al-protection and HF-vapor release process for ultrathin single crystal silicon cantilevers
1 s. A8 E% |' f7 DAbstract
A new technology based on a combination of Al-protection layers and HF-vapor etching to produce ultrathin single crystal silicon
cantilevers is presented. 500 lm long, 10 lm wide and 0.5 lm thick cantilevers have been fabricated with a high yield. A resonance frequency
( M& @, V$ W9 A7 K, iof 2 kHz, Q factor >100,000 and a force sensitivity of 6.0 · 1017 N/Hz1/2 have been obtained in vacuum at room temperature for
9 ^/ P5 L7 _" Ucantilevers annealed at 800 C.
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4 n" z; W; [( g* B, i+ g權限10 & RDB=0

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7 j1 j3 L1 h  n3 G& E9 q- R  k[ 本帖最後由 mt7344 於 2007-6-7 09:57 PM 編輯 ]