ESD的另一种情况:CDE " j8 ^6 b) f5 D w3 |( iCDE--Cable Discharge Event/ y3 k) b5 |/ B# \
% U# |1 a+ W: u# c' p! [Investigation on Robustness of CMOS Devices Against Cable Discharge Event (CDE) Under Different Layout Parameters in a Deep-Submicrometer CMOS Technology0 r8 S. h& _" L% S: ]9 X
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Abstract—Cable discharge events (CDEs) have been found 6 J( C1 u/ l+ c to be the major root cause of inducing hardware damage on 0 m0 C4 e2 G3 T- `5 |* Q Ethernet ICs of communication interfaces in real applications. Still,% X- F% N2 t- [" ~: v# C2 F9 ~
there is no device-level evaluation method to investigate the ro# ]% ]3 a0 R6 J% I' R
bustness of complementary metal–oxide–semiconductor (CMOS)5 M( I! }7 \' a8 p# @
devices against a CDE for a layout optimization in silicon chips.