借鉴一下RF ESD Design in 130nm CMOS

semico_ljj

An ESD-Protected 5-GHz Differential Low-Noise Amplifier in a 130-nm CMOS Process

) t' G6 H0 }; ]  s% b  [! V" b" ]3 E/ e3 eAbstract- A novel ESD protection design for radio-frequency (RF) differential input/output (I/O) pads is proposed and successfully
+ P3 s* y% O# \4 ?- ~7 G' r: eapplied to a 5-GHz differential low-noise amplifier (LNA) in a 130-nm CMOS process. In the proposed ESD protection design,
: ~7 R  d- G0 ^. [an ESD bus and a local ESD clamp device are added between the differential input pads to quickly bypass ESD current, especially
under the pin-to-pin ESD-stress condition. With 10.3-mW power consumption under 1.2-V power supply, the differential LNA
with the proposed ESD protection design has the human-bodymodel (HBM) ESD robustness of 3 kV, and exhibits 18-dB power gain and 2.62-dB noise figure at 5 GHz. Experimental results have demonstrated that the proposed ESD protection circuit can be co-designed with the input matching network of LNA to simultaneously achieve excellent RF performance and high ESD robustness.
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Chandler_Tseng

This is what I need document....


: F# c6 J, {; P, v6 c( h: `! o, XThanks.

ksj116

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