For ESD test (HBM)1 H& H) [4 U, i7 f0 D
The following are the test combination:' U3 V& q z1 o$ D3 Q
1. Power to Power 6 H' \/ ^1 E" O# v' p6 y0 N: i2. Power to Ground) ~$ m1 n' ~0 w4 T# U# y
3. IO to Power, f* x1 {1 f/ E
4. Io to Ground$ f- d& U+ ]2 I1 f' X$ J
5. IO to IO& B3 Y3 B3 R7 `
(different power domain need to be treated as different power. For ground usually you can treat as one group_silicon use substrate as common ground. But if you measure two different ground pin/ball > 2ohms. It should be seperated as 2 grond.)# L% K9 y; ]0 l) V2 ]+ O* V" x$ ?
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the total zap time fomula will be~ 2(+/- polarity) X (IO#X(P#+G#)+IO#+P#X(P#-1)X(P#-2)X...X1+P#XG)# O9 k4 N4 P! e; }
For example: You have IO1/IO2/IO3/P1/P2/G1 c Y# {6 ]& {# L" M. \" E
2x((3X(2+1)+3+2X1+2X1)=25(multiple the zap interval)9 p4 {3 W0 B$ X. S: u; x
So for high pin count it will take a lot of time. But it won't take more than a week(for one chip). $ u' G5 G& u- p! t/ e; w: B3 ?6 U/ f9 g i
For your reference.
thanks wesleysungisme for your answer.6 l, X7 W5 C5 R ^3 r: f
as our pin count is over 1000 and no. of power is ~ 20, so it's quite time-consuming. 8 Q9 ?, D& E2 g$ J9 q, ~+ w5 B
and there is technical issue about bonding all the dies into COB for ESD zapping, i wonder if anyone could share their practise? we feel difficult to strictly follow JEDEC standard.