Layout Optimization on ESD Diodes for Giga-Hz RF and High-Speed I/O Circuits

semico_ljj

Layout Optimization on ESD Diodes for Giga-Hz RF and High-Speed I/O Circuits
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semico_ljj

Abstract -- The diode operated in forward-biased condition has
been widely used as an effective on-chip ESD protection device at
6 s3 C+ M, N) ]1 k" h7 kGHz RF and high-speed I/O pads due to the small parasitic
& _" J3 S% z& ^; kloading effect and high ESD robustness in CMOS integrated
! Q: z" Y6 H* t: e$ L. gcircuits (ICs). This work presents new ESD protection diodes
realized in the octagon, waffle-hollow, and octagon-hollow layout
5 f* B% o( R( [8 O) f! @* N8 zstyles to improve the efficiency of ESD current distribution and
- l+ W  t6 T' a' v! h' ito reduce the parasitic capacitance. The new ESD protection
diodes can achieve smaller parasitic capacitance under the same
- J, j1 s% ]: Y* G- H8 M# h. DESD robustness level as compared to the waffle diode. Therefore,
the signal degradation of GHz RF and high-speed transmission
2 N3 e) a) `' y9 h$ ?can be reduced due to smaller parasitic capacitance from the new
2 b- }" Z) `, f- ]# gproposed diodes.

xp212125o

看起來有幫助
' U9 z6 f2 `; j$ A9 O$ E/ Q感謝分享
2 B7 l/ A5 g# ?7 `' u  B4 i先下載來看看
) C7 q  z3 R4 `9 s) G+ J: @4 xthank you ~

linyuejing

下載來看看
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. ]) [; q- T# J; b; V  v) N應該有幫助
9 r* S4 g6 Q* n. K謝謝囉

caesarxl

谢谢楼主分享，非常感谢

oika_51

看起來有幫助
: p) N. r8 C7 P' M! ?( S感謝分享

linger809

Abstract -- The diode operated in forward-biased condition has
been widely used as an effective on-c ...
semico_ljj 發表於 2010-6-25 08:50 AM

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不知道这种形式的ＩＯ有没有经过测试，实际的效果和预想的有多少的差别，thanks!

oscargo

正為ESD耐受度傷腦筋----

zhifj86

thank you very much for your sharing

sslin

謝謝大大的分享~~知識因分享而壯大！
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- o( Y' q6 B0 L# ?. O8 q. x& N~只有站在巨人的肩膀上才不會被食人族吃了!