HF-vapor release process for ultrathin single crystal silicon cantilevers[EPFL]

mt7344

Combined Al-protection and HF-vapor release process for ultrathin single crystal silicon cantilevers
$ C" x2 l+ H; a. M# ?- ?8 |3 GAbstract
A new technology based on a combination of Al-protection layers and HF-vapor etching to produce ultrathin single crystal silicon
0 X/ f. m9 W/ f  }4 B/ y  z8 a- wcantilevers is presented. 500 lm long, 10 lm wide and 0.5 lm thick cantilevers have been fabricated with a high yield. A resonance frequency
4 ~# g% U& y" q1 j3 u2 _/ Wof 2 kHz, Q factor >100,000 and a force sensitivity of 6.0 · 1017 N/Hz1/2 have been obtained in vacuum at room temperature for
cantilevers annealed at 800 C.
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[ 本帖最後由 mt7344 於 2007-6-7 09:57 PM 編輯 ]