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Design and Analysis of Technology Errors
. a9 G6 j. g" m* [for CMOS Poly-silicon Capacitor& E& g# u" O/ S y
ZHUZhang-ming ,YANGYin-tang , ZHANGChun-peng , FUXiao-dong
8 N" v% ~+ L0 H2 ^0 [ F. e(Microelectronics Institute ,XidianUniversity,Xi’an 710071 , China)2 g" a* \2 S* n
Abstract : The technology errors of CMOS poly-silicon capacitor are analyzed .The effect of various errors introduced- u. {& P$ l, m- ?2 h# W- k$ V! j3 _. M
during fabrication on CMOS poly-silicon capacitor is discussed .Based on the improved design of unit-capacitors , the% \! v9 j, _. P/ E4 ?* x. ^/ y/ K; o
common-centroid floorplan of poly-silicon capacitor is presented . On the proposed capacitor design way , the CMOS/ G+ H) {8 |- ]9 \
switch-capacitor bandpass filters is implemented using 0.6μmCMOSDPDMprocess .Themeasured results of filters show1 P7 L- m4 A; E
that the proposed capacitor designway can be used to design high accuracy capacitors ,and applied to the design of submicro
) H% l. Q T2 L+ Q+ q2 o5 Aand deep sub-micro analog integrated circuit .
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[ 本帖最後由 sjhor 於 2007-5-17 10:37 PM 編輯 ] |
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