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Design and Analysis of Technology Errors" H; n2 B+ @. T r( n" Y
for CMOS Poly-silicon Capacitor
! S4 u) R5 I* IZHUZhang-ming ,YANGYin-tang , ZHANGChun-peng , FUXiao-dong3 f6 m" } W. v& P/ t/ X! z o
(Microelectronics Institute ,XidianUniversity,Xi’an 710071 , China)
1 O; e' g% X* L- H- ~Abstract : The technology errors of CMOS poly-silicon capacitor are analyzed .The effect of various errors introduced
; e6 v0 q& J. `" Nduring fabrication on CMOS poly-silicon capacitor is discussed .Based on the improved design of unit-capacitors , the
/ S; d. J; W: K. |) i3 xcommon-centroid floorplan of poly-silicon capacitor is presented . On the proposed capacitor design way , the CMOS
- M* s d3 c5 s9 e! h! Q% Dswitch-capacitor bandpass filters is implemented using 0.6μmCMOSDPDMprocess .Themeasured results of filters show
/ O6 t* T" L# rthat the proposed capacitor designway can be used to design high accuracy capacitors ,and applied to the design of submicro( Q l* R! w' x
and deep sub-micro analog integrated circuit .2 }! a8 J2 z+ \. C6 N
& }6 K' Z3 d0 F5 K; E" v) a" s2 i2 q回覆後 可以下載PDF附件 權限10 & 3RDB/ D; F1 B6 N; i z& C- y0 i, g
1 H7 p6 c/ j6 V4 G9 j' r. i- i
) }8 `6 ]. N8 h h% J[ 本帖最後由 sjhor 於 2007-5-17 10:37 PM 編輯 ] |
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