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ACMOSLowNoise Amplifier at 1.8GHzwith Active Inductor Load
! ^- p3 ~' \5 V# i) l/ |WANGLiang-jiang,FENGQuan-yuan- O% R, ^" b+ L0 P& E `
(I nstitute of Micro-electronics, Southwest J iaotong University, Chendu 6 1 00 3 1 , China )
: y. W+ {7 S3 [. SAbstract:A 1.8G H z C M O S low noise am plifier (L N A ) w ith transform er-type active inductor load is presented. i4 ?: \; H0 u& p; o8 v* \: W
F or large inductance value, the quality-factor (Q) of an on-chip passive inductor is com m on ly low .' |8 X) W2 O/ A
H ence, the purpose of this w ork is to verify th e validity of using transform er-type active inductor load as
% D: E! d! S" `substitutes for passive one. T he perform ance of the L N A is sim ulated and com pared w ith certain existing3 q' G) d& o/ E' G4 k7 o
L N A w ith passive on -chip inductor load w hich show s the L N A w ith transform er-type active inductor load2 M7 k* t' ?% G6 R, H
can achieve low er noise figure.% q; I7 Q0 }$ t
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/ p! U6 z* \( t- @. i回覆後 可以下載PDF附件 權限10 & 3RDB* [7 G8 H0 p' [. d2 A, Y; J/ [2 ?: a' |
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8 ~5 Y2 f& N, {: r2 G8 y[ 本帖最後由 sjhor 於 2007-5-17 10:33 PM 編輯 ] |
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