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For ESD test (HBM)
# P8 B6 f) P- u8 [6 u+ y) \0 oThe following are the test combination:
) s) G/ T) Y7 m, o( ~1. Power to Power
: }$ ^+ j( \. n+ U$ s C! `3 C0 G2. Power to Ground5 w# Y1 P K$ {7 J9 L
3. IO to Power2 d4 b/ U6 h5 m( J; W+ ~" X
4. Io to Ground3 D1 k( U% r9 Z0 I
5. IO to IO; `7 _' f& i5 R$ A8 N/ b$ N
(different power domain need to be treated as different power. For ground usually you can treat as one group_silicon use substrate as common ground. But if you measure two different ground pin/ball > 2ohms. It should be seperated as 2 grond.)
4 ^6 m Y# ?; [& n: `
@" E1 q& K, u3 [the total zap time fomula will be~ 2(+/- polarity) X (IO#X(P#+G#)+IO#+P#X(P#-1)X(P#-2)X...X1+P#XG)
, h, E- w3 d" s2 k0 t! \1 _For example: You have IO1/IO2/IO3/P1/P2/G1
: m" n* {* u" j# [7 M9 x" t2x((3X(2+1)+3+2X1+2X1)=25(multiple the zap interval)
2 X* ]1 P# a/ X( kSo for high pin count it will take a lot of time. But it won't take more than a week(for one chip). 3 ]9 e7 ?+ _" c4 i& L: D g
0 m; u! C" Q; B" d
For your reference. |
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