NLDD is a N-type lightly doped drain (implant layer) for E-field reduction @drain or source site especially for general submicro process. ' J* R& c6 ?4 m/ uNDD is a N-type double diffusion drain (implant layer for current technology) for E-field reduction @drain or source site (depend on asymmetric or symmetric device structure) especially for high voltage process. No special layout concern, just follow DRM.