HF-vapor release process for ultrathin single crystal silicon cantilevers[EPFL]

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Combined Al-protection and HF-vapor release process for ultrathin single crystal silicon cantilevers
Abstract
A new technology based on a combination of Al-protection layers and HF-vapor etching to produce ultrathin single crystal silicon
  ]0 `& I, e) W# W0 a2 [* ncantilevers is presented. 500 lm long, 10 lm wide and 0.5 lm thick cantilevers have been fabricated with a high yield. A resonance frequency
of 2 kHz, Q factor >100,000 and a force sensitivity of 6.0 · 1017 N/Hz1/2 have been obtained in vacuum at room temperature for
( b# Q' f7 Q8 \$ h! W0 v; m$ acantilevers annealed at 800 C.
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" _- w5 {( C$ h+ ?( Y+ U8 q$ B: H[ 本帖最後由 mt7344 於 2007-6-7 09:57 PM 編輯 ]