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ACMOSLowNoise Amplifier at 1.8GHzwith Active Inductor Load
+ o5 c1 w3 M% \WANGLiang-jiang,FENGQuan-yuan) h( y9 S8 Y3 k3 K+ f: R
(I nstitute of Micro-electronics, Southwest J iaotong University, Chendu 6 1 00 3 1 , China )
# k% I: P& _( D# R! y7 ]- vAbstract:A 1.8G H z C M O S low noise am plifier (L N A ) w ith transform er-type active inductor load is presented.
4 `/ F0 \* Q+ P( qF or large inductance value, the quality-factor (Q) of an on-chip passive inductor is com m on ly low .* g+ X7 Z# r, s; z4 Q. K
H ence, the purpose of this w ork is to verify th e validity of using transform er-type active inductor load as/ u; i6 H1 D9 c v' U
substitutes for passive one. T he perform ance of the L N A is sim ulated and com pared w ith certain existing$ d0 I0 ]( e7 w
L N A w ith passive on -chip inductor load w hich show s the L N A w ith transform er-type active inductor load
3 U; r$ B7 {. M( A! M& o- ecan achieve low er noise figure.
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回覆後 可以下載PDF附件 權限10 & 3RDB
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[ 本帖最後由 sjhor 於 2007-5-17 10:33 PM 編輯 ] |
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