ESD的另一种情况:CDE$ B1 ~+ T( h2 }
CDE--Cable Discharge Event; n+ u! C& v" h4 E
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Investigation on Robustness of CMOS Devices Against Cable Discharge Event (CDE) Under Different Layout Parameters in a Deep-Submicrometer CMOS Technology 9 h z0 i4 V: Q" l& b c" n: w% o' I) u/ T
Abstract—Cable discharge events (CDEs) have been found & [. \/ G) X+ U. ]. q+ J8 j to be the major root cause of inducing hardware damage on% E/ X% E A. I8 ~' Z0 m* j
Ethernet ICs of communication interfaces in real applications. Still, ! K o4 y6 i3 X) z4 d8 L there is no device-level evaluation method to investigate the ro7 t' x" l* n+ B% G3 j
bustness of complementary metal–oxide–semiconductor (CMOS) + f/ j8 R6 {7 P1 V1 h# t4 r7 m4 h devices against a CDE for a layout optimization in silicon chips.