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在EDA Board 抓的資訊, 參考一下:
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I believe that what you are getting at is that there is a specific structure of P+/Nwell/Psub that is used for
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the "bipolar", so you are asking why use that structure rather than simply a P+/Nwell "diode". Here is my take ; `* I0 m3 [; E; Y* j- C5 C! ^
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on this:
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1- The "bipolar" will simulate more accurately than the "diode", since it will include the substrate current 3 c4 H! k* W5 l+ O) I7 D8 W! A) Y
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2- There usually is a specific structure for the "bipolar" that has characterization data available. When - L$ [ q. Z7 k F# d
& V+ n* M- }2 Ybuilding a bandgap structure, the good characterization is needed in order to properly determine the tempco of
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the Base-emitter voltage.* z: @/ z* k% l$ z# X5 G! W: W
8 Z% t! ]$ U. i' E9 A$ y3- The additional structure of the bipolar should help prevent current injection into other substrate tied I3 [3 H) x: x3 q8 }; c4 ^
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devices.
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There is, of course, nothing preventing the use of a P+/Nwell diode in your application. |
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