First Fully CMOS-Integrated 3D Hall Probe[EPFL/2005]

mt7344

網路上抓的 paper, 希望對大家有幫助!!
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ABSTRACT
7 ]- J8 _; `' y. Q0 G" IIn this paper, we present a new planar fluxgate
magnetometer structure. The sensor has the
orthogonal fluxgate configuration which makes the
: U. v4 x6 N# _! H' ~2 adetection part independent of the excitation
% G1 c* b& L4 J$ |8 E7 Kmechanism. The sensor consists of a ferromagnetic
cylindrical core covering an excitation rod, and
planar coils for signal detection. The fabricated
0 r! m  C  M" q+ v- c) Zsensor has a linear range of ±250 μT, a sensitivity
of 4.3 mV/mT, and a perming below 400 nT for
1 K+ V  n8 N2 V% ]6 p( s200 mA peak sinusoidal excitation current at
100 kHz. The effect of demagnetization on the
sensitivity, linear range, and perming for this
structure is demonstrated by varying the length of
the ferromagnetic core.

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3 J; _! J0 }9 E9 N( C7 s4 u- H# pABSTRACT
4 F$ d( G9 z5 u& hIn this paper we report on a 32x32 optical imager
based on single photon avalanche diodes integrated in
CMOS technology. The maximum measured dynamic
range is 120dB and the minimum noise equivalent
intensity is 1.3x10-3lx. The minimum integration time
per pixel is 4􀁐s. The output of each pixel is digital,
thereby requiring no complex read-out circuitry, no
amplification, no sample & hold, and no ADC.
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1 k) W2 x6 G! |; ~
3 a- l# N# Y' Q5 u9 ~/ @ABSTRACT
We present the first fully CMOS-integrated 3D
Hall probe. The microsystem is developed for precise
# t6 A6 [" _1 }- D  n5 f: L5 U& Tmagnetic field measurements in the range from
militeslas up to tens of tesla in the frequency range
from DC to 30 kHz and a spatial resolution of about
( b) H, J, C0 s0 E) D8 ?150 μm. Microsystem is realized in a conventional
% n2 s  J" k# u& h  ^1 B3 o! S8 v- WCMOS process without any additional processing step
and can be manufactured at very low cost. With the
  E, v- {" c  O5 \' l( S" melectronics circuit applying the so-called spinningcurrent
9 a( y! m6 p- t9 F! |technique to the Hall sensor block, we obtain
( E. y+ P" k  P4 e8 Nlow noise (a resolution better than 100 μT) and low
cross talk between the channels (less than 0.2%
between the channels up to 2 T). The single chip
configuration insures a precision of the orthogonality
between the measurement axes better than 0.5°. A
temperature sensor based on band-gap cell is integrated
directly on the chip, which allows a good temperature
8 f! J* @( b: p2 r3 v! Q# xdrift compensation of the system.

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, j, M0 F3 Z) X0 ?  N$ QMagnetic sensors having submicrometer spatial resolution
are key elements in several fundamental studies as well
: n* f. g( A3 x5 A9 N" F9 Aas industrial applications.1–4 Hall effect devices are emerging
! _2 ^/ c4 I% \, aas one of the most suitable solutions.4–9 The ordinary Hall
9 X1 M, m4 m9 a% F- ]effect is due to the Lorentz force acting on charge carriers in
+ t! P$ S" z; L4 ametals, semi-metals, and semiconductors.5 Magnetic materials
. B7 L9 O: O8 j# lshow additional “Hall phenomena” which are, generally
+ T. J2 X; g* D+ b. B6 _speaking, generated by spin–orbit interactions: the so-called
extraordinary10–16 and planar Hall effects.17–

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5 K4 t+ e0 l# Y, S( e
We developed a LODESR spectrometer based on a miniaturized Hall sensor and a
9 `3 v/ L* K6 `' G2 l# C) dresonant cavity tuned at 14 GHz. We used InSb cross-shaped Hall devices (designed and
. D7 u5 P$ d6 R. r9 a7 pfabricated in collaboration with Asahi Corporation) with active areas down to (7 μm)2. The
# k: X  v: R$ H8 p9 i3 B+ DHall sensor is inserted in the cavity within a hole.
Coupling between the microwave power (guided wave) and the cavity is achieved by using
an iris.We adjusted the iris diameter and the cavity dimension such that the resonant
1 @& }, c2 y9 `( F) }" J7 ufrequency is about 14 GHz. Our final design has a 4.36 mm diameter aperture. The Hall
device does not significantly change the Q-factor and the resonance frequency of the cavity.
The quality factor Q of the cavity is about 104.
" k9 N! e8 r" }: \6 ^3 x

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Abstract—In this paper, we present a low-power, two-axis fluxgate
# [8 A& h, F) C- Y2 ymagnetometer. The planar sensor is integrated in a standard
CMOS process, which provides metal layers for the coils and
electronics for the signal extraction and processing. The ferromagnetic
: R5 W! z" N8 pcore is placed diagonally above the four excitation coils
by a compatible photolithographic post process, performed on
a whole wafer. The sensor works using the single-core principle,
7 t! S3 B2 W# Z* r( a! M% Vwith a modulation technique to lower the noise and the offset
at the output. In contrast to traditional fluxgate approaches, the
8 `4 a; C3 C- U( Z- csensor features a high degree of integration and minimal power
6 G. M" s) L+ Qconsumption at 2.5 V of supply voltage that makes it suitable
for portable applications. A novel digital feedback principle is
integrated to linearize the sensor characteristics and to extend the
linear working range.

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% b3 C& P' j. K5 l
A microscopic four-point probe

4PP for resistivity measurements on thin films was designed and
% ]# H( i6 J' p) w- \* p- [fabricated using the negative photoresist SU-8 as base material. The device consists of four
microscopic cantilevers, each of them supporting a probe tip at the extremity. The high flexibility of
) d5 \. b/ F6 lSU-8 ensures a stable electrical point contact between samples and probe tip with all four electrodes
even on rough surfaces. With the presented surface micromachining process,
4PPs with a
4 O; x5 V! ~, N/ ]probe-to-probe spacing of 10–20
m were fabricated. Resistivity measurements on thin Au, Al, and
1 f8 y* C7 s: j5 I- bPt films were performed successfully. The measured sheet resistances differ by less than 5% from
% L* A, ~; k' I0 {: d2 }those obtained by a commercial macroscopic resistivity meter. Due to the low contact forces

Fcont10−4 N, the
4PP is suitable to be applied also to fragile materials such as conducting
  ^" M. {5 a, k/ m' C+ Z6 P' l0 c" ypolymers. Here the authors demonstrate the possibility of performing resistivity measurements on
8 ^0 e& k. {4 g1 p' c  _, z100-nm-thick pentacene
C22H14 films with a sheet resistance Rs106 /
. © 2005 American
Institute of Physics.

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& J" Y6 `' O  A
We present here a novel concept to perform NMR spectroscopy: Confining the sample within
: I" y+ _  o0 sartificial vesicles, which are structured on the surface of a microfabricated planar detection
" W8 o1 U9 S- W3 icoil. Different vesicle patterns show the improvement of the NMR performance, when
structuring the sample in areas of homogenous RF field.
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5 t' r  r( W0 ^% ~& _9 K
We developed an inductive system to measure the surface concentration of superparamagnetic
microbeads resulting from a bioassay. Our tabletop apparatus, tested with Dynal MyOne™
" ~5 X9 U3 F0 G0 d. x$ l' @microbeads, has a detection limit of about 1000 beads/Hz1/2
i.e., about 2
1010 Bohr magnetons.
+ p& ]% ~- W2 G4 k2 OThe system can measure surface concentrations from 0.01% to 100% over the 6 mm2 sensitive area
& Z6 B2 O) p) d6 rwith an integration time of 1 s. © 2005 American Institute of Physics.

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8 e  Y$ {; g) `1 s[ 本帖最後由 mt7344 於 2007-6-11 10:47 PM 編輯 ]

angala

推推,我想看paper^^感謝大大唷~~

engineer

探討『磁力』相關的論文嗎？值得一看，甘溫啦。