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Silicided poly...silicon targe poly& K; F: w8 O0 L
unsilicided poly...unsilicon targe Poly
; O7 p, `- U, R
4 E* L0 r/ e+ p4 ttc1 First-order temperature coefficient. (Default: resistor model parameter tc1r; 0 if no model is specified.)2 d7 L" }& {- S5 y1 u8 A
tc2 Second-order temperature coefficient. (Default: resistor model parameter tc2r; 0 if no model is specified.)
: ~' B0 p( [0 g1 |% i" fvc1 voltage across the first capacitor
3 p% O; ~/ _6 O- D+ ]8 kvc2 voltage across the second capacitor
' V* x" @, ]' W2 q7 |; e+ l' S: Z S- A
A two-terminal resistor.
3 S4 \. y( I1 x: @- S. f' @6 E+ lThe resistance R is influenced by the temperature as follows:
- ]1 V9 v$ \/ W/ B- a! R# d% OR = N (1 + AT + BT2)5 p6 j" ~: C' E7 |: _
T = Ta – Tn
( V/ A# u( e- `$ u3 iwhere N, A, B are device parameters described below; Ta (the “ambient” temperature) is set by the
. `; P; P* B* h! D.temp command; and Tn (the “nominal” temperature): ` `6 h, l6 S/ q/ {3 U( g7 Z
* v: G- b1 e' K6 M! l+ B
) Q% h$ K7 \! m9 m$ w: n
This produces a resistor of resistance 30 kilohms at the nominal temperature tnom. If the temperature T8 Y* L6 j+ D: [- z
is different from tnom, the resistance is 30,000*(1+0.01*(T-tnom)+0.0001*(T-tnom)*(T-tnom)). For
. |* [- i9 {" x0 X+ p( f! V; p" kexample, if the circuit temperature is 127 degrees and tnom is 27 degrees, the resistance is
$ t# e# K2 e, q30,000*(1+0.01*100+0.0001*100*100) = 90,000 Ohms.
: H* J5 w8 W2 U
4 \3 u) \' |: p1 S[ 本帖最後由 m851055 於 2007-7-30 08:50 PM 編輯 ] |
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