First Fully CMOS-Integrated 3D Hall Probe[EPFL/2005]

mt7344

網路上抓的 paper, 希望對大家有幫助!!


2 L5 g. O8 K5 v7 ]# f5 V7 MABSTRACT
( a! N, `% e& x' M/ vIn this paper, we present a new planar fluxgate
$ ]+ _& \5 @: T" B3 v! z1 U7 Pmagnetometer structure. The sensor has the
orthogonal fluxgate configuration which makes the
detection part independent of the excitation
% T  r" a1 z7 Gmechanism. The sensor consists of a ferromagnetic
# f8 l) f1 _; O$ {cylindrical core covering an excitation rod, and
planar coils for signal detection. The fabricated
9 d  e1 i) i% L8 d, s6 B+ Gsensor has a linear range of ±250 μT, a sensitivity
- r) Q; C& v2 q- Xof 4.3 mV/mT, and a perming below 400 nT for
0 U/ L" o7 \* D- N& A$ [200 mA peak sinusoidal excitation current at
" J2 N: C! h: z& i7 ~) H100 kHz. The effect of demagnetization on the
sensitivity, linear range, and perming for this
structure is demonstrated by varying the length of
  @& f, |; V- }$ }8 ^% zthe ferromagnetic core.
4 }( ^. i3 g3 u2 D

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ABSTRACT
In this paper we report on a 32x32 optical imager
( [  W; Q/ R! w5 ebased on single photon avalanche diodes integrated in
- b# n* W! F7 N- Y6 @* r. vCMOS technology. The maximum measured dynamic
+ `8 N: g. u, Drange is 120dB and the minimum noise equivalent
intensity is 1.3x10-3lx. The minimum integration time
per pixel is 4􀁐s. The output of each pixel is digital,
thereby requiring no complex read-out circuitry, no
amplification, no sample & hold, and no ADC.
. C+ y3 T/ H  v9 d

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2 H5 r: L0 ]! s7 s7 A1 ^* v2 PABSTRACT
+ J: \3 M! z9 d9 S& K+ C& ]We present the first fully CMOS-integrated 3D
Hall probe. The microsystem is developed for precise
) Q: X! `: `8 P6 g8 n* Ymagnetic field measurements in the range from
0 A8 S2 x0 p8 |: B& Omiliteslas up to tens of tesla in the frequency range
from DC to 30 kHz and a spatial resolution of about
150 μm. Microsystem is realized in a conventional
( h* _% n# Y1 a5 sCMOS process without any additional processing step
and can be manufactured at very low cost. With the
1 {6 S! h% A( k1 `  A5 S8 ]electronics circuit applying the so-called spinningcurrent
technique to the Hall sensor block, we obtain
* v% Z$ q, Z% K& S- ]! I! i% dlow noise (a resolution better than 100 μT) and low
cross talk between the channels (less than 0.2%
' w& L* l1 o4 Y5 s& p5 k; vbetween the channels up to 2 T). The single chip
, o4 m; V: K7 }% p* c! _% Zconfiguration insures a precision of the orthogonality
9 \0 D' W3 ~% O! f/ z: u4 qbetween the measurement axes better than 0.5°. A
temperature sensor based on band-gap cell is integrated
directly on the chip, which allows a good temperature
1 ]* D+ `& y, p; w$ W4 Qdrift compensation of the system.

: V+ s9 q+ p1 e# B2 L6 N, @4 v

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8 k* o6 T' a6 x# [9 @$ e& MMagnetic sensors having submicrometer spatial resolution
( e* x' n! O9 }8 m7 v( S3 x1 oare key elements in several fundamental studies as well
$ N" v) m: G. J, A; Jas industrial applications.1–4 Hall effect devices are emerging
as one of the most suitable solutions.4–9 The ordinary Hall
effect is due to the Lorentz force acting on charge carriers in
metals, semi-metals, and semiconductors.5 Magnetic materials
show additional “Hall phenomena” which are, generally
( V9 t1 G& X  e& zspeaking, generated by spin–orbit interactions: the so-called
extraordinary10–16 and planar Hall effects.17–

# P6 Q) W5 R4 ^: P0 g; b

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We developed a LODESR spectrometer based on a miniaturized Hall sensor and a
resonant cavity tuned at 14 GHz. We used InSb cross-shaped Hall devices (designed and
& t! O  A) i" V% Ffabricated in collaboration with Asahi Corporation) with active areas down to (7 μm)2. The
& a$ ?4 F! x0 v$ N; W$ w6 x" NHall sensor is inserted in the cavity within a hole.
' b: k: _! g% K! ]! B; yCoupling between the microwave power (guided wave) and the cavity is achieved by using
an iris.We adjusted the iris diameter and the cavity dimension such that the resonant
: i$ v7 l9 R6 E& f3 G" Bfrequency is about 14 GHz. Our final design has a 4.36 mm diameter aperture. The Hall
device does not significantly change the Q-factor and the resonance frequency of the cavity.
: n2 F$ ~# m+ K! K/ k/ Y" s* ~The quality factor Q of the cavity is about 104.

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6 k, n5 j1 F# |" z# G7 j4 z. TAbstract—In this paper, we present a low-power, two-axis fluxgate
magnetometer. The planar sensor is integrated in a standard
6 y# r% A5 }. p+ v/ B9 h! s0 I& W+ jCMOS process, which provides metal layers for the coils and
electronics for the signal extraction and processing. The ferromagnetic
7 c; I+ P( Y' r  Y% r1 \core is placed diagonally above the four excitation coils
( G& Q( Z* i) Gby a compatible photolithographic post process, performed on
a whole wafer. The sensor works using the single-core principle,
2 J0 R; V3 r" a6 I  Zwith a modulation technique to lower the noise and the offset
at the output. In contrast to traditional fluxgate approaches, the
sensor features a high degree of integration and minimal power
' j1 A7 s( @+ k2 j% vconsumption at 2.5 V of supply voltage that makes it suitable
for portable applications. A novel digital feedback principle is
% G) I# o0 i" ~$ ?/ qintegrated to linearize the sensor characteristics and to extend the
( H: [$ T+ w2 \$ I* Zlinear working range.

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A microscopic four-point probe

4PP for resistivity measurements on thin films was designed and
) T) p/ m) h  @1 K1 ~fabricated using the negative photoresist SU-8 as base material. The device consists of four
microscopic cantilevers, each of them supporting a probe tip at the extremity. The high flexibility of
5 v6 |  x* ^# S9 D0 JSU-8 ensures a stable electrical point contact between samples and probe tip with all four electrodes
$ q, Z. y7 W/ {7 a8 n4 f. Yeven on rough surfaces. With the presented surface micromachining process,
4PPs with a
' f. \5 x7 f$ }/ fprobe-to-probe spacing of 10–20
m were fabricated. Resistivity measurements on thin Au, Al, and
% D; A* G- o% x  sPt films were performed successfully. The measured sheet resistances differ by less than 5% from
those obtained by a commercial macroscopic resistivity meter. Due to the low contact forces
# y+ n7 w, F  r0 p2 t% b. Z
Fcont10−4 N, the
4PP is suitable to be applied also to fragile materials such as conducting
polymers. Here the authors demonstrate the possibility of performing resistivity measurements on
100-nm-thick pentacene
C22H14 films with a sheet resistance Rs106 /
. © 2005 American
Institute of Physics.
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. H# v1 k3 K+ i1 {  l
. g' s' A: b: p+ B# R9 L
. e8 P  c1 `- F" w- J# P3 ^' m: ^( EWe present here a novel concept to perform NMR spectroscopy: Confining the sample within
artificial vesicles, which are structured on the surface of a microfabricated planar detection
coil. Different vesicle patterns show the improvement of the NMR performance, when
structuring the sample in areas of homogenous RF field.

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! B' p) P; }$ V/ @9 p& e

We developed an inductive system to measure the surface concentration of superparamagnetic
0 H4 A. l8 I+ A% q5 `microbeads resulting from a bioassay. Our tabletop apparatus, tested with Dynal MyOne™
. O/ \) n- s! _& Smicrobeads, has a detection limit of about 1000 beads/Hz1/2
i.e., about 2
1010 Bohr magnetons.
: y- X7 ~' x" U: ^* j1 w. Y# J$ uThe system can measure surface concentrations from 0.01% to 100% over the 6 mm2 sensitive area
with an integration time of 1 s. © 2005 American Institute of Physics.

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[ 本帖最後由 mt7344 於 2007-6-11 10:47 PM 編輯 ]

angala

推推,我想看paper^^感謝大大唷~~

engineer

探討『磁力』相關的論文嗎？值得一看，甘溫啦。