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ACMOSLowNoise Amplifier at 1.8GHzwith Active Inductor Load
6 a. u) K) j e- CWANGLiang-jiang,FENGQuan-yuan
. |; c- P3 ~, G$ p" c2 `(I nstitute of Micro-electronics, Southwest J iaotong University, Chendu 6 1 00 3 1 , China )
_! M$ L: s% fAbstract:A 1.8G H z C M O S low noise am plifier (L N A ) w ith transform er-type active inductor load is presented.
5 \7 ]5 H g: ~) x: mF or large inductance value, the quality-factor (Q) of an on-chip passive inductor is com m on ly low .
9 [' `8 X- Q+ V6 s4 G+ B6 GH ence, the purpose of this w ork is to verify th e validity of using transform er-type active inductor load as
, }$ T" Q6 m3 X- P0 s+ I: f' Ysubstitutes for passive one. T he perform ance of the L N A is sim ulated and com pared w ith certain existing
6 e. M) w! u* t) _# P) Q. t: BL N A w ith passive on -chip inductor load w hich show s the L N A w ith transform er-type active inductor load8 Z- ?6 \$ T2 h. v$ n# u% Q
can achieve low er noise figure.2 H5 c- Y% i; I1 @
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* q8 h% P3 \# v8 a$ T7 z
回覆後 可以下載PDF附件 權限10 & 3RDB
V" m0 G. G) G* Y$ Q
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8 [4 q- s* g. x' Z. N) Z[ 本帖最後由 sjhor 於 2007-5-17 10:33 PM 編輯 ] |
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