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For ESD test (HBM)
0 e' E, [. |, L. {$ z3 [& f/ uThe following are the test combination:" W, Q' m2 s5 v) O
1. Power to Power# R( S1 U; @6 Q* B, b+ r
2. Power to Ground. _6 d2 w6 ]. z1 a# G7 v
3. IO to Power! j; G9 A! ?2 h* O
4. Io to Ground/ G& B1 Q+ {/ s& q% X+ m
5. IO to IO* N4 l5 Q& z2 c; M2 O
(different power domain need to be treated as different power. For ground usually you can treat as one group_silicon use substrate as common ground. But if you measure two different ground pin/ball > 2ohms. It should be seperated as 2 grond.)9 N9 h, @4 b! K% i+ [; Y S6 y$ J4 M
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the total zap time fomula will be~ 2(+/- polarity) X (IO#X(P#+G#)+IO#+P#X(P#-1)X(P#-2)X...X1+P#XG)0 E- _3 `' ~7 a6 S/ g6 |2 f
For example: You have IO1/IO2/IO3/P1/P2/G1* B9 s! s2 e( y
2x((3X(2+1)+3+2X1+2X1)=25(multiple the zap interval)3 n! e( L+ c1 m A
So for high pin count it will take a lot of time. But it won't take more than a week(for one chip).
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For your reference. |
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