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A novel ESD protection design for radio-frequency (RF)9 t M4 M2 q/ L* Y8 Z
differential input/output (I/O) pads is proposed and successfully; X1 `- q. S" H" V
applied to a 5-GHz differential low-noise amplifier (LNA) in a
, e9 h" T: ~- A; B! z130-nm CMOS process. In the proposed ESD protection design,
- X2 K3 R' `- D& @0 `* jan ESD bus and a local ESD clamp device are added between the
3 ~! y+ v$ @; \& b! e) `differential input pads to quickly bypass ESD current, especially
% k% y7 f; M j/ T/ \; punder the pin-to-pin ESD-stress condition. With 10.3-mW power
* ?: _( _5 B- e. Iconsumption under 1.2-V power supply, the differential LNA
9 }" P' w( k$ G" n( Dwith the proposed ESD protection design has the human-bodymodel
6 P- I6 y4 z C(HBM) ESD robustness of 3 kV, and exhibits 18-dB power, n2 `: y; b, X
gain and 2.62-dB noise figure at 5 GHz. Experimental results) c# Z$ ^' c: g! C9 k4 U3 E
have demonstrated that the proposed ESD protection circuit can- R* u/ m; r, r; ^& G- h- h
be co-designed with the input matching network of LNA to
6 b5 [7 ~" p/ G9 K1 I) N J8 C/ J# o7 usimultaneously achieve excellent RF performance and high ESD robustness.+ q, B2 H3 M' G+ p; x% r+ V
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