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我在之前的公司有lay過double guard rings,內圍是用PTHIN guard rings,外圍是用
$ w6 k3 _9 ]2 v% ZNwell+NTHIN(甜甜圈結構).主要就是用來防止noise,那時是圍在Oscillator外圍.% [: {' M! L5 e; ^% y6 u, D
( E! ?! A' ^7 a% UDummy的話,不知道你指的是那部份?? 引述一篇paper " SmartExtract:Accurate Capacitance 6 E6 r0 Q$ @% L3 o! R h
Extraction for SOC", 這裡提到的dummy是指layout完成後,在每層layer空曠處,補上同一layer
! ]! Y. w. K- w, Hdummy, 為的是在CMP process時,有較佳的均勻性:
6 {7 t- \- R' ]6 J3 o" c2 WDummy(or fill) metal is introduced in the interconnect process flow to enable uniform
8 Q, p# m7 j7 _4 r! u* o2 Z thickness control in the CMP process. Dummy metal needs to be treated as floating metal ! X& `: K/ E* w0 t
unless it is intentionally connected to a constant potential. Floating dummy metal 9 X- A2 J1 f1 b- y7 U
essentially acts as a capacitance divider.7 ?7 \+ v! V, `8 \) T) ~$ F9 F- I
另外有一種dummy, 之前我在做analog layout時,會在需做match的mos旁,故意lay半顆或整顆( ?0 U5 ^& q3 V# p% i) s& C+ H
mos,除了你寫的那些原因,我想是因為實體mos的邊緣不見得是像layout般的四方形(what you draw is not what you get),可能是梯形或不規則多邊形,製程上很難做到如此完美,所以為了確保
\$ u4 a7 c: M" n8 L' H主要的mos的完整性及對稱性,在mos旁再多加dummy mos(不要讓主要mos成為最邊緣的部
/ d! ]. w, t6 T$ o: j; T; N3 r份).以上是我自己的想法,歡迎各位先進指教 |
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