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For ESD test (HBM)
: h9 d% F3 F( B; B5 `The following are the test combination:# b8 z$ B+ g3 h2 V: A8 r" y
1. Power to Power7 u, p, h5 y, [: i
2. Power to Ground/ g z K ~; }
3. IO to Power
- _& F: O7 A' R3 I0 X4. Io to Ground. ]; e M" j) _4 {. L" l, M
5. IO to IO3 q+ k9 G1 G8 r& ~- b' R) {! S0 W
(different power domain need to be treated as different power. For ground usually you can treat as one group_silicon use substrate as common ground. But if you measure two different ground pin/ball > 2ohms. It should be seperated as 2 grond.)9 n% g4 I; q r% }3 P) n
O4 j g% p1 {8 Z2 kthe total zap time fomula will be~ 2(+/- polarity) X (IO#X(P#+G#)+IO#+P#X(P#-1)X(P#-2)X...X1+P#XG)8 `( C; i: G0 L( z# o
For example: You have IO1/IO2/IO3/P1/P2/G1
$ i4 g5 N( V* n2x((3X(2+1)+3+2X1+2X1)=25(multiple the zap interval) E% T" @; e3 f9 O3 H$ ~- @
So for high pin count it will take a lot of time. But it won't take more than a week(for one chip).
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For your reference. |
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