|
For ESD test (HBM)
: _ o+ l; T8 ?/ G( b; ]" `; XThe following are the test combination:0 c. H, V' a, _! e+ M5 Z
1. Power to Power
& g. S c9 E, \2. Power to Ground3 h# Z$ z: _+ ]) B) J
3. IO to Power& ]( J Y- x0 [
4. Io to Ground1 @: o( s2 o6 s; V- v
5. IO to IO
0 K. j* w# N+ j D' p# K(different power domain need to be treated as different power. For ground usually you can treat as one group_silicon use substrate as common ground. But if you measure two different ground pin/ball > 2ohms. It should be seperated as 2 grond.)' ?" ^) H+ i8 Y8 e1 D
0 ^! ?# ^7 F) |, d$ n0 p8 T0 g6 ithe total zap time fomula will be~ 2(+/- polarity) X (IO#X(P#+G#)+IO#+P#X(P#-1)X(P#-2)X...X1+P#XG)" R8 f( e, D$ d" h
For example: You have IO1/IO2/IO3/P1/P2/G12 C3 H* [( y9 p& W
2x((3X(2+1)+3+2X1+2X1)=25(multiple the zap interval)
0 H# d/ T, k- A% F1 a( I- i; FSo for high pin count it will take a lot of time. But it won't take more than a week(for one chip).
! i+ F5 s6 K( n7 J3 o( O' B
" s6 [7 |$ l' m' q. IFor your reference. |
|