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發表於 2010-6-25 08:50:33
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Abstract -- The diode operated in forward-biased condition has1 H# g, ~( ?4 Z1 |7 C. [2 E
been widely used as an effective on-chip ESD protection device at
& K, e5 p) O5 _- k. WGHz RF and high-speed I/O pads due to the small parasitic
0 d1 s& ^. P3 [" L+ Lloading effect and high ESD robustness in CMOS integrated
% ? [5 w0 \5 H( h" Z7 D* r6 `1 Gcircuits (ICs). This work presents new ESD protection diodes) [- ?8 Q4 D& H2 H5 H8 u
realized in the octagon, waffle-hollow, and octagon-hollow layout
$ n7 z7 s7 ~% r5 Rstyles to improve the efficiency of ESD current distribution and; F5 k- T+ ?7 s, \7 y- c
to reduce the parasitic capacitance. The new ESD protection
3 u+ P6 A8 G1 {4 qdiodes can achieve smaller parasitic capacitance under the same$ g$ Q' K$ T- h7 S
ESD robustness level as compared to the waffle diode. Therefore,
8 B6 [7 Y6 {0 {. L, M" vthe signal degradation of GHz RF and high-speed transmission
2 U) {6 n, n1 ^2 ucan be reduced due to smaller parasitic capacitance from the new
0 K! B) u8 v2 O* H( N5 y- t+ P, n/ u; Rproposed diodes. |
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