thanks wesleysungisme for your answer.2 E' P1 m V' ~( i
as our pin count is over 1000 and no. of power is ~ 20, so it's quite time-consuming. 8 y( I9 Y& P! G% I4 }/ m
and there is technical issue about bonding all the dies into COB for ESD zapping, i wonder if anyone could share their practise? we feel difficult to strictly follow JEDEC standard.
For ESD test (HBM) % b( s! ^8 m5 K0 zThe following are the test combination: {- h. s' _0 r' g+ M# J6 U
1. Power to Power 2 ~& x$ d0 Q: H2. Power to Ground 6 N8 M) a$ ]; s8 R3. IO to Power$ |3 ]& q1 J7 V* h
4. Io to Ground 1 T$ t0 J0 g5 X! ]% n. S5. IO to IO % M2 B' x5 d7 A. n( }* l# S(different power domain need to be treated as different power. For ground usually you can treat as one group_silicon use substrate as common ground. But if you measure two different ground pin/ball > 2ohms. It should be seperated as 2 grond.)4 |3 k R) P# D7 @$ j
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the total zap time fomula will be~ 2(+/- polarity) X (IO#X(P#+G#)+IO#+P#X(P#-1)X(P#-2)X...X1+P#XG) % t/ D; P0 y: [( @# y5 KFor example: You have IO1/IO2/IO3/P1/P2/G1 , s0 D* T8 X& O2 z% e2x((3X(2+1)+3+2X1+2X1)=25(multiple the zap interval)& g: G/ J- N% O
So for high pin count it will take a lot of time. But it won't take more than a week(for one chip). $ m5 c: ^' \& v# E' A