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我在之前的公司有lay過double guard rings,內圍是用PTHIN guard rings,外圍是用2 C- b( h; a6 H& O# n0 N# W
Nwell+NTHIN(甜甜圈結構).主要就是用來防止noise,那時是圍在Oscillator外圍.
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' Z& @( K6 D' xDummy的話,不知道你指的是那部份?? 引述一篇paper " SmartExtract:Accurate Capacitance
6 j5 @/ x. V2 {2 T3 ^Extraction for SOC", 這裡提到的dummy是指layout完成後,在每層layer空曠處,補上同一layer ) i* _$ W& c7 }1 \& B* i# k
dummy, 為的是在CMP process時,有較佳的均勻性:5 j) Y; {) w) c; v
Dummy(or fill) metal is introduced in the interconnect process flow to enable uniform4 v" u; l, k; o/ `. u$ U' J
thickness control in the CMP process. Dummy metal needs to be treated as floating metal
2 [7 |9 c: B+ y3 y. }- }. Lunless it is intentionally connected to a constant potential. Floating dummy metal 8 h; N& t4 ^0 {3 G4 O6 u3 c" e9 K, m( _
essentially acts as a capacitance divider.5 h% |3 [4 s, C
另外有一種dummy, 之前我在做analog layout時,會在需做match的mos旁,故意lay半顆或整顆7 b$ Z0 M$ C2 B6 t! O
mos,除了你寫的那些原因,我想是因為實體mos的邊緣不見得是像layout般的四方形(what you draw is not what you get),可能是梯形或不規則多邊形,製程上很難做到如此完美,所以為了確保3 d: v3 k, ]5 g) C2 D( [
主要的mos的完整性及對稱性,在mos旁再多加dummy mos(不要讓主要mos成為最邊緣的部# J1 a6 }) U8 ~1 C! B0 H
份).以上是我自己的想法,歡迎各位先進指教 |
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