hspice 問題 有關mos內部電容指令

0918429587

mos內部電容要看Cgs Cgd Cdb Cbs

+ l0 f( j  j2 C# `+ K要怎麼定義用
plot LX??
- m9 s; Y& C- ?+ X3 H' G4 V$ `
請各位幫忙一下

chcheng

Refer to "HSPICE User's Manual: Elements and Device Models Vol.II"
0 N$ ^0 u. E3 L* {3 OAn example for your reference...
4 f5 h, ~  V  _
+ n/ N+ n  ~7 f* p# g  R3 d----------------------------------------------------------------
! ~% V7 j* }6 X***** Gate Capacitance Plots *****
, p$ f( V6 U) o4 U$ I4 W# F.lib 'your_component_model' lib_corner
.temp operational_temp
.option dccap=1 post
m1 n_drain n_gate gnd n_bulk l=0.8u w=100u ad=200e-12 as=200e-12
. R4 C4 I* W0 G/ ?% j! jvd n_drain gnd 0
7 T' t9 Y. u4 J6 P" l) Ovg n_gate gnd 5
vb n_bulk gnd 0
.dc vd 0 5.0 0.1
" t* _# x+ [9 v2 ]% q; c- w9 I" a.print   CGG=lx18(m1)
+        CGD=par('-lx19(m1)')
% L$ ]4 e% d6 ^8 t& o9 F+        CGS=par('-lx20(m1)')
+        CDG=par('-lx32(m1)')
+        CSG=par('lx18(m1) + lx21(m1) + lx32(m1)')
, t0 w3 B8 [# n& Z0 t/ U6 F+        CGB=par('lx18(m1) + lx19(m1) + lx20(m1)')
.ends
! H. @+ N1 s% p
----------------------------------------------------------------
  ]" b5 H, z6 G& A. S8 d) T3 jSix capacitance are reported in the operating point printout
    cd_total = dQD/dVD
    cg_total = dQG/dVG
2 p' c6 ~% u" Q6 s1 }# j0 D    cs_total = dQS/dVS
/ \' M3 E9 P, ^2 n    cb_total = dQB/dVB
    cgs = -dQG/dVS
    cgd = -dQG/dVD
There capcitances include gate-drain, gate-source, and gate-bulk
* B$ w! w) b( x+ xoverlap capacitance, and drain-bulk and source-bulk diode capacitance.
0 ]% q1 e) M' b0 p% g
CGG = dQg/dVG
! I( ~9 X* L2 y) }9 k6 t4 y- |CGD = -dQg/dVD
" Z: ^3 p9 ~  t% |" n! w* qCDG = -dQD/dVG

The MOS element template printouts for gate capacitance are LX18~LX23
and LX32~LX34.

+ d0 D- Q0 j$ ^4 x) E) m! r: sLX18(m) = dQG/dVGB = CGGBO
. G. o9 u+ B& [; ?# O8 d* @LX19(m) = dQG/dVDB = CGDBO
LX20(m) = dQG/dVSB = CGSBO
0 s6 L2 t" D; @/ j; o+ C! n
# e3 Z. R" Y# pLX21(m) = dQB/dVGB = CGGBO
& B3 `, E; F" F: T8 m" k, d/ z  E: o7 ULX22(m) = dQB/dVDB = CGGBO
7 w1 J& K7 e; m, B( gLX23(m) = dQB/dVSB = CGGBO
, N: m! c! z! M: @# o
LX32(m) = dQD/dVG = CDGBO
$ t/ C' s) z( x2 L5 D: b9 G/ ]LX33(m) = dQD/dVD = CDDBO
! [9 F% v! ^) c$ b9 V3 zLX34(m) = dQD/dVS = CDSBO
! L. i) c8 T! x& A8 k& Q# C
, f2 n+ I% ]+ a9 _7 }1 A& `The equation shown above is for an NMOS with source-bulk grounded
configuration. Refer to the user's manual for more detail ^^

0918429587

CAB_BS    LX28
; {: S( [" P8 U7 O. uCAB_BD   LX29

其他我找不到
Cgd Cgs Cgb 可由 lx(19) lx(20) lx(21) 分別 print out
這是 CGDBO  CGSBO CBGBO

7 g) o! k2 M* l7 X$ q不一樣

yalon

您得隨手  查一下 manual .
6 I$ m3 w- k. S
+ F. T  h/ N. ^; }$ ?" _Cgd Cgs Cgb 可由 lx(19) lx(20) lx(21) 分別 print out.
* f0 X$ I( ^9 ~* e
4 \& r) X& c- x7 T$ s6 `7 [
For your reference.

小朱仔

直接下.op及.probe
找*.lis檔(模擬產生出來的檔)裡的MOS就可以看到您要的C值了