supply clamp and I/O clamp ESD

ritafung

請問你們使用哪一種類型的I/O cell設計?

8 p$ e5 s1 I5 q$ ?$ n1) Local cell (PDIO + NDIO) + RC trigger clamp
! N& h5 p, Y5 b: g  Q& P8 o1 _* Y2) Local cell (GDPMOS + GGNMOS) + RC trigger clamp
, f. H2 q$ o/ l- A3) Purely GGNMOS
* O' d" T* k. e) C! l
For RC trigger clamp, how much RC do you design? My company needs 4KV HBM.

ritafung

我現在做的是0.13um,要4kV,而且是multi-power domain,有點困難...
* s* J' \% ^# L$ D4 v4 _: {Layout 的要求非常高! 但是永遠實際上是做不到~~~trade-off~~