How's the performance between GGNMOS & GCNMOS?$ l y! h- [& g: f! l2 F+ y* L
Does GCNMOS discharge the ESD pulse by the strong inverson channel induced by gate coupling effect? How's the effectiveness and ESD robustness per area?3 l# Y3 h2 W6 @* h/ E+ Z. T
We normally use GGNMOS / GDPMOS + RC-trigger clamp. % s% c; [) F) x& g i
Any idea to exchange?
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發表於 2008-4-12 01:01:28
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