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我找到一篇論文 跟這個問題相關性頗高' F" u0 t6 j) h- O1 Y
論文題目是- c; W% z0 k5 A) U) S5 n' B2 Z$ f& E
Blowing polysilicon fuses:what conditions are best
; V' q9 O, A! q如需論文可以參考另外一則問題
1 ~% u, E: }$ _" @8 b& R如何下載IEEE論文??
8 J* h/ N; g# y0 |% f) N: s; Lso....
1 u6 d$ \' u- ~8 q7 o u5 ?( F結論* `1 O( X1 M6 T) [8 s! s
The experiment condition is:" @2 N* s* a1 k# U8 y) V" R# A
0.6 um CMOS process
. D# M2 Q: ~, w1500A WSix on top of 1500A N++ doped polisilicon
, `7 K4 @* f# x1 `" M3 f3.0um/6.0um fuse were blown using a 400um/6.0um NMOSFET
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20M Ohm between 4.5-6.5V" ?, t, o* f+ L6 Y7 S
Energy of melting~0.13uJ: {; s: I; ]. k3 q
Energy of open~2.0uJ |
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