11/19-20 Semiconductor Manufacturing Forum 2009

chip123 · 發表於 2009-10-21 17:58:10

由台灣半導體產業協會主辦之「2009半導體製造技術論壇Semiconductor Manufacturing Forum 2009」將於11/19-20於新竹交通大學舉行，會中邀請關於Thin Film、Asembly, Packaging & Testing、Diffusion、Design, Reliability & Testing、Litho與Etching等專家對未來趨勢與新技術進行專題演講，是半導體專業人士不可錯過的一場盛會，即日起開始報名，歡迎各界踴躍參加。

2009/11/19-20 National Chiao Tung University Library International Conference Hall
交通大學浩然國際會議廳

Agenda 議程
Session 1: Thin Film (11/19 13:20-16:20)

/ l& Z2 b& D# H b! W1 J	Topic	Speaker
13:20-14:00 K j- h+ y8 m3 o6 e" `	Engineering Slurry for Copper Chemical Mechanical Polishing , \2 \4 ^5 q4 I1 f, b7 e	Dr. Song-Yuan Chang / $ U; G' s' Z0 n7 \: q& f, l CTO& senior VP, UWiZ 7 `3 d: D5 I7 t# _Technology
14:00-14:40 / o5 ^# G$ R O+ P$ Q* d	Tailoring CMP Consumable Sets To Meet the Increasing Demands Of IC Device Manufacturing For Advanced Nodes	Dr. Fred Sun / Cabot( v3 D- ]) n8 x% _- A# X
14:40-15:00 * k1 v6 h/ n5 u; ]% s: A9 y	Break" }6 U$ u. P5 _" W' W7 H	6 h, }+ j9 c" a/ b4 F% x, x: Y
15:00-15:40$ x! S. i1 a4 _( u6 `' L+ ^	? ( J/ b" T0 ]' \|6 p6 C	Apllied Materials5 G7 a& Q+ R+ O, M" z
15:40-16:20 2 C; T' {2 ?1 r# ~, h _( e7 s	CMP Fundamentals and Implications for Consumables Design % L( z% }8 D! y: A	Ms. Kate Kao/ Marketing Manager Dow chemical & n% Y; U) V& d) Z0 B

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chip123 · 發表於 2009-10-21 17:59:25

Session 2: Assembly, Packaging & Testing (11/19 13:20-16:20)

J+ w9 V7 C) a. N/ w! j% i& Y	Topic" F" E2 s" T R' i/ f$ K" j	Speaker9 ]" W; ^8 `( c: J; T/ Z- y. X
13:20-14:00 6 c$ n. n4 _ s& Q	Sip Assembly technology? - z' u' b: }9 H1 v8 l	Dr. KC Yee/ VP, ASE 1 p* Y' a, S$ e6 H- l
14:00-14:40+ s& k" Z9 z; g1 n' m+ N	Assembly trend from perspective ! W6 I, _ g& B9 u	邱世冠資深經理/矽品 1 A8 j# \0 j, D( J1 D前瞻科技中心 - b( c; X* l3 \|$ s
14:40-15:00, e+ i: o2 F6 `6 Q	Break- U# b! `! p b3 z	2 ?1 ?1 z& c4 I- ~; F# ^5 T! k
15:00-15:40 ' k" j# x9 x( D! j; R0 x9 W m	The Paradise of Cost-Effective Wafer Probing Technology! b; g$ K, T* W	Dr. CCNi / Associate Director , KYEC) x; Y, I( m* t, V" q+ Q
15:40-16:20 $ \# K/ G% D* v' t5 {. N& p	RF SOC /Sip?3 n8 y: e* O. }5 w- Y- q; D1 t; \	Verigy * Y5 I/ u4 N0 K/ \9 t$ G6 J

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chip123 · 發表於 2009-10-21 17:59:56

Session 3: Design, Reliability & Testing

" d4 S. J0 {* q, ~/ j) K: d, ^	Topic ( t2 c J. E! l+ W0 A, }! V) Z	Speaker( ] W$ N* D$ T! C* [
9:00-9:40 5 ^: j% N1 M; N$ l7 G' G	Design Trend? 7 H7 U: H q# z! ]	Marketing VP, Dr. Chiang Alchip7 x+ ^' a0 P& C: x# j5 W, q
9:40-10:20 7 s4 R' u/ G F( l) P/ v	Charged-Device-Model (CDM) ESD Protection in CMOS Integrated Circuits ; g- A. x2 w' Z7 P, c! _5 X" [2 G	Prof. Ming-Dou Ker / I-Shou Universit 3 v0 H$ i% `6 l. e
10:20-10:40$ v/ j. z. j" M& \	Break 5 Y1 q% \. n5 ]& A2 L) ?+ W	5 k$ o6 B0 o/ i1 U, p; i. N% [
10:40-11:20 # l1 X" ~3 m# D# I	Parametric Test Challenges of the Next Process Frontier 9 @: F2 p/ V* I( o' ]# @	Ms. Flory Tsai / agilent ) z% h4 [: y; i* q9 {
11:20-12:00 0 n% q, u7 c5 ?- k L2 ^	Recent Development Work and Trend for Semiconductor Device Characterization . X! }8 r7 G, @' @/ z	AL Feng / 專案經理 / Keithley Taiwan 1 l, H; G- H2 `. L$ R4 _5 Y

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chip123 · 發表於 2009-10-21 18:01:32

Session 4: Diffusion

1 y; {( W- B* f, _" k# u	Topic 8 Z% `+ ?: d, U% y& \|4 B' p9 {7 V	Speaker! y- l9 M: ~$ \6 ~8 {' l1 D) ~
9:00-9:40( d+ b( t, v" B% U/ i8 p( N	Surface Preparation process control requirement to support CMOS scaling into 22nm ' h7 @7 ^ a2 n2 \|" B	Dr. Scott Becker/ Vice President, FSI + V9 m& x2 N: ~& P7 v8 \5 n7 I. o
9:40-10:20 * R, q! ?3 }- V8 W$ W3 o6 O	Wafer techincal roadmap and application for advanced or special proces4 ^% \|: u& g$ t c- h; v	MEMC 9 w8 A: H; Y( M8 W% Z$ F
10:20-10:40 - m* \|1 h8 i3 S: ^# z6 \/ J	Break( G( }5 `* ?: A	1 d1 u) s( S. \|8 R2 x
10:40-11:20 8 m' ]! p! J& T( L	0 q1 X$ X) _% z: l5 Q+ u	6 f7 C! O* t& M# z* A; g0 {

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chip123 · 發表於 2009-10-21 18:02:03

Session 5: Litho

; l N% q3 A+ J2 ]: n	Topic. z3 O8 t( y3 D5 j8 M' U9 v, L3 n	Speaker I f* }9 F- e l" F S. l1 X
13:20-14:000 H5 _ I6 h( Z9 _	Photomask technology for 32/22nm and beyond 5 B1 U0 l5 ?$ C2 v5 d e	Dr. Hiroaki Morimoto/Senior General Manager, ' n& Z3 t, @& l2 b. IToppan Printing3 a9 m% I5 P9 \( t1 y
14:00-14:40 y7 U# s/ K+ L2 k# L8 ]7 f	3 ~. q4 S# x) e/ n% e& W+ YImplant Resists for Advanced Node Applications & b0 f/ k: w, {% i+ L' p	Mr. Yoshiro Yamamoto/ a' e! O. h/ X% _9 kDUV RD mamager, DOW / r" e, k/ q4 ? 9 [- a& @; Y7 }8 @$ y/ x( w' g" aSemiconductor Technology ' v2 b0 S$ G& \3 ]( j
14:40-15:00 ! R7 X1 b1 _! U	Break ! t; O2 a4 c: o7 `) U* @+ l7 }) Y	& `+ M" z) i4 t" A
15:00-15:40 " m4 n8 R3 G- L; ]: v	State-Of-The-Art Development of BARC Material + i, ?3 U/ E; P* {' P3 B	Brewer Science ' U* d- ~* n! y& }0 D( n3 ~/ E
15:40-16:20, @7 R0 C: m$ Q+ h! q8 c	The Future Trend for Next Generation Lithography ! T1 \. _* ]) ]$ q" b& l	ASML + y& c8 N* u- [6 U. T# c8 u# G& A
16:20-17:00 ' ~7 H9 F9 L: Y5 @; K9 k	Future Trend of Track Technology - ^2 _$ j5 I2 o7 _' e	TEL 0 B# m: k/ L' e0 I

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chip123 · 發表於 2009-10-21 18:02:34

Session 6: Etching

% h( Q$ N' p) D, B' P6 @	Topic4 l. s5 v$ d: N	Speaker 0 E% o! J" a+ v5 Z& L k' F
13:20-14:00) {/ ^& e4 @/ }* V5 J' y6 G	The Advantages of real-time wet process monitoring by multi-channel, in-line NIR analyzer : M# V* j9 G( v" x	Mr. Shay Tina / CI Semi , Director of Sales5 w" g7 e" Y2 {3 f
14:00-14:40 0 G7 b5 T* ?& O1 H1 J( ?5 B$ F	Green Chemistry for current technology and beyond ; D: }- C! }$ q* s; ]6 i	Mr. Elvis Sheen / Mallinckrodt Baker, Senior Manager 0 y3 O- g: T7 I8 \| v" q
14:40-15:00 ( k4 ^5 j# D8 u7 {2 T+ Q4 d. _	Break ' y) a0 _# E' [7 k7 ^2 a	% b: R7 {( M4 h) @& o, Y" w
15:00-15:40 # T) P2 j4 W$ G+ a$ x	Post-etch residue removal for advanced copper low-k device * {# T3 u6 L% k! y. c	Dr. Hisashi Takeda / EKC Technology, DuPont 9 ^. h: b$ D7 R; h5 s
15:40-16:20+ Q, c0 A) i9 @' d	Edge Die Yield Improvement with Immersion Lithography Defectivity Control by Bevel Etch Clean' b4 G) C4 h% c2 g1 Y- h7 V	Lam Research+ X2 ~* d' q) @) v+ p2 @) T& O# E3 O
16:20-17:000 @5 W$ k i E. U" N0 Z	Improved Control of Through-Silicon Via Profiles for Advanced Packaging Applications* t, N8 q& Q6 ?- U/ s	Surface Technology Systems, x# e* }4 c) k, F9 d2 j

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