標題: 如何模擬MOS的電容 [打印本頁] 作者: andrew_wee 時間: 2009-5-18 11:25 PM 標題: 如何模擬MOS的電容 請教諸位，在cadence下如何模擬mos管的寄生電容隨Vgs變化而變化的情況？具體情況如附件所示。[attach]6859[/attach]作者: tianruo 時間: 2009-5-21 09:18 AM
use DC simulation？you can try it。作者: seanyang1337 時間: 2009-5-21 09:51 AM
Dear andrew, 3 z1 M, d& M% J' i! L
It is easy, make sure your mos was connected like an capacitor." t Q; Y- U' A4 h3 \
Using calculator-> op to mos, choose the cgs, then get express to your output. # |8 l: N' {6 ~" c* H) RThen, use the parametric analysis to sweep Vg. 2 q n2 f [/ d% i& zYou will see that !!!!作者: andrew_wee 時間: 2009-5-21 11:22 AM
Thank you seanyang1337! Please tell more details, i can't get your idea completely. My email is andrew_wee@163.com作者: super 時間: 2009-5-28 10:56 AM
you can reference HSPICE example.4 O% c8 r; n0 ^2 @
it's have example file to do this simulation.作者: andrew_wee 時間: 2009-5-28 10:41 PM
Thank you,super!i find it! Maybe it is helpful for me,i hope that!作者: gyamwoo 時間: 2009-6-3 11:14 AM
我都下這樣的指令，詳細你看看手冊. {5 c7 w/ d/ Q L7 a4 \
.OPTION DCCAP9 E* d. o; ~# X8 w" s' ]
.PRINT cdtot=CAP(mos_drain) dgtot=CAP(mos_gate) ... $ `+ K1 K. Q5 I2 |9 \CAP(NODE) NODE是指你想知道電容值的端點作者: vinsonsu 時間: 2011-7-29 01:08 PM
you can reference HSPICE example. \) z1 O+ r* q2 p; F' Z; a0 }
d6 m E' `0 f% V, }% Kit's have example file to do this simulation作者: tangent 時間: 2012-9-9 03:37 AM
HSPICE 可以使用LX18或是查詢manual!!